IXYS Corporation Discrete Semiconductor Products - Transistors - IGBTs MWI100-12A8

Description
IGBT MODULE 1200V 160A 640W E3
Description
IGBT MODULE 1200V 160A 640W E3

Suppliers

Company
Product
Description
Supplier Links
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
MWI100-12A8
Discrete Semiconductor Products - Transistors - IGBTs MWI100-12A8
IGBT MODULE 1200V 160A 640W E3

IGBT MODULE 1200V 160A 640W E3

Supplier's Site

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number MWI100-12A8
Product Name Discrete Semiconductor Products - Transistors - IGBTs
Packing Method Box
Unlock Full Specs
to access all available technical data

Similar Products

Discrete IGBT Modules - XS series (7th-Gen) Model: FGW50XS65 - Fuji Electric Corp. of America
Fuji Electric Corp. of America
Discrete IGBT Modules
XS series (7th-Gen) Model: FGW50XS65
Specs
VCES 650 volts
IC(max) 50 amps
Switching Speed 20 kHz
View Details
600V 25A 100W IGBT Transistor - 297-BSM15GP60BOSA1 - ERSAELECTRONICS PTE. LTD.
Infineon Technologies AG
600V 25A 100W IGBT Transistor
BSM15GP60BOSA1
Specs
PD 100 milliwatts
TJ -40 to 125 C (-40 to 257 F)
Package Type Tray
View Details
4 suppliers
IGBTs - Single - NGTB45N60S1WG - 887243-NGTB45N60S1WG - Win Source Electronics
Rochester Electronics
IGBTs - Single - NGTB45N60S1WG
NGTB45N60S1WG
Specs
TJ -55 to 175 C (-67 to 347 F)
Package Type TO-247; SOT3; TO-247-3
Features IGBT Trench 600 V 90 A 300 W Through Hole TO-247-3
View Details
IGBTs - 2074954 - RS Components, Ltd.
RS Components, Ltd.
IGBTs
2074954
Specs
Polarity N-Channel
IC(max) 100 amps
Package Type Module
View Details