IXYS Integrated Circuits Division IGBT Modules MIXA60W1200TED

Description
IGBT Module PT Three Phase Inverter with Brake 1200V 85A 290W Chassis Mount E2
Request a Quote Datasheet
Description
IGBT Module PT Three Phase Inverter with Brake 1200V 85A 290W Chassis Mount E2
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IGBT Modules - MIXA60W1200TED-ND - DigiKey
Thief River Falls, MN, United States
IGBT Modules
MIXA60W1200TED-ND
IGBT Modules MIXA60W1200TED-ND
IGBT Module PT Three Phase Inverter with Brake 1200V 85A 290W Chassis Mount E2

IGBT Module PT Three Phase Inverter with Brake 1200V 85A 290W Chassis Mount E2

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - IGBT Modules - 1351894-MIXA60W1200TED - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - IGBTs - IGBT Modules
1351894-MIXA60W1200TED
Discrete Semiconductor Products - Transistors - IGBTs - IGBT Modules 1351894-MIXA60W1200TED
Win Source Part Number: 1351894-MIXA60W1200T ED Category: Discrete Semiconductor Products - Transistors - IGBTs - IGBT Modules Package: Box Standard Package: 6 Power - Max: 290 W Configuration: Three Phase Inverter with Brake Input: Standard IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Cutoff (Max): 500 µA NTC Thermistor: Yes Mounting Type: Chassis Mount Package / Case: E2 Supplier Device Package: E2 Temperature Range - Operating: -40°C ~ 125°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 40 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: MIXA60 California Prop 65: Warning Information Current - Collector (Ic) (Max): 85 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 55A

Win Source Part Number: 1351894-MIXA60W1200TED
Category: Discrete Semiconductor Products - Transistors - IGBTs - IGBT Modules
Package: Box
Standard Package: 6
Power - Max: 290 W
Configuration: Three Phase Inverter with Brake
Input: Standard
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 500 µA
NTC Thermistor: Yes
Mounting Type: Chassis Mount
Package / Case: E2
Supplier Device Package: E2
Temperature Range - Operating: -40°C ~ 125°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 40 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Base Product Number: MIXA60
California Prop 65: Warning Information
Current - Collector (Ic) (Max): 85 A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 55A

Buy Now Datasheet
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
MIXA60W1200TED
Discrete Semiconductor Products - Transistors - IGBTs MIXA60W1200TED
IGBT MODULE 1200V 85A 290W E2

IGBT MODULE 1200V 85A 290W E2

Supplier's Site
IGBT Modules - MIXA60W1200TED - ODG (Origin Data Global)
Shenzhen, China
IGBT Modules
MIXA60W1200TED
IGBT Modules MIXA60W1200TED
IGBT MODULE 1200V 85A 290W E2

IGBT MODULE 1200V 85A 290W E2

Supplier's Site Datasheet
Sheung Wan, Hong Kong
IGBT Modules
MIXA60W1200TED
IGBT Modules MIXA60W1200TED
IGBT Modules Six-Pack XPT IGBT

IGBT Modules Six-Pack XPT IGBT

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global) VAST STOCK CO., LIMITED
Product Category Transistors Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number MIXA60W1200TED-ND 1351894-MIXA60W1200TED MIXA60W1200TED MIXA60W1200TED MIXA60W1200TED
Product Name IGBT Modules Discrete Semiconductor Products - Transistors - IGBTs - IGBT Modules Discrete Semiconductor Products - Transistors - IGBTs IGBT Modules IGBT Modules
Package Type E2 SOT3 E2
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