Zilog Single IGBTs IXYX200N65B5

The IXYX200N65B5 is a 650 V, 200 A silicon IGBT in a PLUS-247-3L package, designed for medium-frequency switching applications from 5 to 30 kHz. It features a collector-emitter saturation voltage of 1.45 V at 100 A and 15 V gate-emitter voltage, with a maximum junction temperature of 175 °C. The device supports a peak pulsed collector current of 1130 A and has a thermal resistance from junction to case of 0.093 °C/W. The package measures 20.80 to 21.34 mm in length and 15.75 to 16.13 mm in width. The IGBT meets international standard packaging and offers a square RBSOA, positive thermal coefficient, and low gate charge. It is rated for continuous collector current of 210 A at 110 °C case temperature and has a gate-emitter voltage rating of ±20 V continuous. The part is qualified for industrial use with an operating junction temperature range of -55 °C to 175 °C.