The IXYX180N65A5 is a 650 V, 180 A continuous collector current IGBT designed for switching applications up to 5 kHz, using XPT™ thin-wafer and trench technology to achieve low conduction losses and gate drive requirements. It is packaged in a PLUS-247 case with a weight of 10 g and a maximum junction temperature of 175 °C. The device has a collector-emitter saturation voltage of 1.35 V at 100 A and 15 V gate-emitter voltage, and a thermal resistance from junction to case of 0.13 °C/W. It supports a reverse biased safe operating area of 360 A under clamped inductive load conditions and meets the AEC-Q200 automotive qualification standard. The gate charge is 654 nC, with a turn-off fall time of 110 ns at 25 °C.
IGBT TRENCH FS 650V 400A PLUS247
| DigiKey | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 238-IXYX180N65A5-ND |
| Product Name | Single IGBTs |
| TJ | -55 to 175 C (-67 to 347 F) |