Zilog Single IGBTs IXYX180N65A5

Description
IGBT TRENCH FS 650V 400A PLUS247
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Description
IGBT TRENCH FS 650V 400A PLUS247
Request a Quote
Datasheet
Datasheet Summary
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The IXYX180N65A5 is a 650 V, 180 A continuous collector current IGBT designed for switching applications up to 5 kHz, using XPT™ thin-wafer and trench technology to achieve low conduction losses and gate drive requirements. It is packaged in a PLUS-247 case with a weight of 10 g and a maximum junction temperature of 175 °C. The device has a collector-emitter saturation voltage of 1.35 V at 100 A and 15 V gate-emitter voltage, and a thermal resistance from junction to case of 0.13 °C/W. It supports a reverse biased safe operating area of 360 A under clamped inductive load conditions and meets the AEC-Q200 automotive qualification standard. The gate charge is 654 nC, with a turn-off fall time of 110 ns at 25 °C.

Datasheet Summary
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The IXYX180N65A5 is a 650 V, 180 A continuous collector current IGBT designed for switching applications up to 5 kHz, using XPT™ thin-wafer and trench technology to achieve low conduction losses and gate drive requirements. It is packaged in a PLUS-247 case with a weight of 10 g and a maximum junction temperature of 175 °C. The device has a collector-emitter saturation voltage of 1.35 V at 100 A and 15 V gate-emitter voltage, and a thermal resistance from junction to case of 0.13 °C/W. It supports a reverse biased safe operating area of 360 A under clamped inductive load conditions and meets the AEC-Q200 automotive qualification standard. The gate charge is 654 nC, with a turn-off fall time of 110 ns at 25 °C.

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - 238-IXYX180N65A5-ND - DigiKey
Thief River Falls, MN, United States
IGBT TRENCH FS 650V 400A PLUS247

IGBT TRENCH FS 650V 400A PLUS247

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Technical Specifications

  DigiKey
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number 238-IXYX180N65A5-ND
Product Name Single IGBTs
TJ -55 to 175 C (-67 to 347 F)
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