IXYS Integrated Circuits Division Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs IXYX120N120B3

Description
Win Source Part Number: 1355056-IXYX120N120B 3 Category: Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs Temperature Range - Operating: -55°C ~ 175°C (TJ) Fake Threat In the Open Market: 34 pct. MSL Level: 1 (Unlimited) Mfr: IXYS Series: XPT™, GenX3™ Package: Tube Product Status: Active Package / Case: TO-247-3 Variant Supplier Device Package: PLUS247™-3 Base Product Number: IXYX120 Mounting Type: Through Hole HTSUS: 8541.29.0095 REACH Status: REACH Unaffected ECCN: EAR99 Test Condition: 960V, 100A, 1Ohm, 15V Reverse Recovery Time (trr): 54 ns Current - Collector (Ic) (Max): 320 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1500 W Input Type: Standard Current - Collector Pulsed (Icm): 800 A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A Switching Energy: 9.7mJ (on), 21.5mJ (off) Gate Charge: 400 nC Td (on/off) @ 25°C: 30ns/340ns
  • Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs - 1355056-IXYX120N120B3 - Win Source Electronics
    Win Source Electronics
  • Single IGBTs - IXYX120N120B3-ND - DigiKey
    DigiKey
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Description
Win Source Part Number: 1355056-IXYX120N120B 3 Category: Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs Temperature Range - Operating: -55°C ~ 175°C (TJ) Fake Threat In the Open Market: 34 pct. MSL Level: 1 (Unlimited) Mfr: IXYS Series: XPT™, GenX3™ Package: Tube Product Status: Active Package / Case: TO-247-3 Variant Supplier Device Package: PLUS247™-3 Base Product Number: IXYX120 Mounting Type: Through Hole HTSUS: 8541.29.0095 REACH Status: REACH Unaffected ECCN: EAR99 Test Condition: 960V, 100A, 1Ohm, 15V Reverse Recovery Time (trr): 54 ns Current - Collector (Ic) (Max): 320 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1500 W Input Type: Standard Current - Collector Pulsed (Icm): 800 A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A Switching Energy: 9.7mJ (on), 21.5mJ (off) Gate Charge: 400 nC Td (on/off) @ 25°C: 30ns/340ns
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs - 1355056-IXYX120N120B3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
1355056-IXYX120N120B3
Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs 1355056-IXYX120N120B3
Win Source Part Number: 1355056-IXYX120N120B 3 Category: Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs Temperature Range - Operating: -55°C ~ 175°C (TJ) Fake Threat In the Open Market: 34 pct. MSL Level: 1 (Unlimited) Mfr: IXYS Series: XPT™, GenX3™ Package: Tube Product Status: Active Package / Case: TO-247-3 Variant Supplier Device Package: PLUS247™-3 Base Product Number: IXYX120 Mounting Type: Through Hole HTSUS: 8541.29.0095 REACH Status: REACH Unaffected ECCN: EAR99 Test Condition: 960V, 100A, 1Ohm, 15V Reverse Recovery Time (trr): 54 ns Current - Collector (Ic) (Max): 320 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1500 W Input Type: Standard Current - Collector Pulsed (Icm): 800 A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A Switching Energy: 9.7mJ (on), 21.5mJ (off) Gate Charge: 400 nC Td (on/off) @ 25°C: 30ns/340ns

Win Source Part Number: 1355056-IXYX120N120B3
Category: Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Fake Threat In the Open Market: 34 pct.
MSL Level: 1 (Unlimited)
Mfr: IXYS
Series: XPT™, GenX3™
Package: Tube
Product Status: Active
Package / Case: TO-247-3 Variant
Supplier Device Package: PLUS247™-3
Base Product Number: IXYX120
Mounting Type: Through Hole
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99
Test Condition: 960V, 100A, 1Ohm, 15V
Reverse Recovery Time (trr): 54 ns
Current - Collector (Ic) (Max): 320 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1500 W
Input Type: Standard
Current - Collector Pulsed (Icm): 800 A
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
Switching Energy: 9.7mJ (on), 21.5mJ (off)
Gate Charge: 400 nC
Td (on/off) @ 25°C: 30ns/340ns

Buy Now Datasheet
Single IGBTs - IXYX120N120B3-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single IGBTs
IXYX120N120B3-ND
Single IGBTs IXYX120N120B3-ND
IGBT 1200V 320A 1500W Through Hole PLUS247™-3

IGBT 1200V 320A 1500W Through Hole PLUS247™-3

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
IGBT Transistors
IXYX120N120B3
IGBT Transistors IXYX120N120B3
IGBT Transistors DISC IGBT XPT-GENX3

IGBT Transistors DISC IGBT XPT-GENX3

Buy Now Datasheet
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - IGBTs
IXYX120N120B3
Discrete Semiconductor Products - Transistors - IGBTs IXYX120N120B3
IGBT

IGBT

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Acme Chip Technology Co., Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 1355056-IXYX120N120B3 IXYX120N120B3-ND IXYX120N120B3 IXYX120N120B3
Product Name Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs Single IGBTs IGBT Transistors Discrete Semiconductor Products - Transistors - IGBTs
VCES 1200 volts
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