The IXYT90N65A5HV is a 650 V, 90 A Gen5 XPT™ IGBT in a TO-268HV package, designed for switching applications up to 5 kHz with low conduction losses and gate drive requirements. It features a collector-emitter saturation voltage of 1.35 V at 60 A and 15 V gate-emitter voltage, a junction-to-case thermal resistance of 0.23 °C/W, and a maximum junction temperature of 175 °C. The device supports a continuous collector current of 90 A at 110 °C and a pulsed collector current of 600 A for 1 ms. It meets international standard package requirements and is suited for inverters, welding machines, UPS, and PFC circuits.
IGBT TRENCH FS 650V 220A TO268HV
| DigiKey | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 238-IXYT90N65A5HV-ND |
| Product Name | Single IGBTs |
| TJ | -55 to 175 C (-67 to 347 F) |