IGBT PT 650V 50A 200W Through Hole TO-220-3
Manufacturer: IXYS
Win Source Part Number: 1324414-IXYP20N65C3D
Category: Discrete Semiconductor Products>Transistors
Packaging: Tube
Standard Package: 50
Mounting: Through Hole
Power - Max: 200 W
Reverse Recovery Time (trr): 135 ns
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 50 A
Current - Collector Pulsed (Icm): 105 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Switching Energy: 430µJ (on), 350µJ (off)
Input Type: Standard
Gate Charge: 30 nC
Td (on/off) @ 25°C: 19ns/80ns
Test Condition: 400V, 20A, 20Ohm, 15V
Supplier Device Package: TO-220-3
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Case / Package: TO-220-3
ECCN: EAR99
Fake Threat In the Open Market: 67
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Base Product Number: IXYP20
RoHS Status: ROHS3 Compliant
IGBT 650V 18A 50W TO220
IGBT Transistors DISC IGBT XPT-GENX3
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXYP20N65C3D1-ND | 1324414-IXYP20N65C3D1 | IXYP20N65C3D1 | IXYP20N65C3D1 |
| Product Name | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs - Single | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Transistors |
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
