Zilog Single IGBTs IXYK300N65A3

Description
IGBT PT 650V 600A 2300W Through Hole PLUS264™
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Description
IGBT PT 650V 600A 2300W Through Hole PLUS264™
Request a Quote
Datasheet
Datasheet Summary
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The IXYK300N65A3 is a 650 V, 300 A IGBT in a TO-264 package, designed for high-power applications such as inverters, motor drives, and UPS systems. It features a maximum collector-emitter saturation voltage of 1.60 V at 100 A and 15 V gate-emitter voltage, with a rated junction temperature range of -55 °C to 175 °C. The device supports a clamped inductive switching energy of up to 2 J and has a rated short-circuit withstand time of 8 μs at 150 °C junction temperature. Thermal resistance from junction to case is 0.065 °C/W, and mounting torque is specified at 1.13 Nm. It is avalanche-rated, meets RoHS standards, and has a square safe operating area for reverse bias conditions.

Datasheet Summary
Powered by GS/AI

The IXYK300N65A3 is a 650 V, 300 A IGBT in a TO-264 package, designed for high-power applications such as inverters, motor drives, and UPS systems. It features a maximum collector-emitter saturation voltage of 1.60 V at 100 A and 15 V gate-emitter voltage, with a rated junction temperature range of -55 °C to 175 °C. The device supports a clamped inductive switching energy of up to 2 J and has a rated short-circuit withstand time of 8 μs at 150 °C junction temperature. Thermal resistance from junction to case is 0.065 °C/W, and mounting torque is specified at 1.13 Nm. It is avalanche-rated, meets RoHS standards, and has a square safe operating area for reverse bias conditions.

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - 238-IXYK300N65A3-ND - DigiKey
Thief River Falls, MN, United States
IGBT PT 650V 600A 2300W Through Hole PLUS264™

IGBT PT 650V 600A 2300W Through Hole PLUS264™

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Technical Specifications

  DigiKey
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number 238-IXYK300N65A3-ND
Product Name Single IGBTs
TJ -55 to 175 C (-67 to 347 F)
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