IXYA60N65A5 is a 650 V, 60 A Gen5 XPT IGINT device in a TO-263 package, designed for switching applications up to 5 kHz. It features a collector-emitter saturation voltage of 1.35 V at 36 A and 15 V gate-emitter voltage, a thermal resistance junction-to-case of 0.38 °C/W, and a maximum junction temperature of 175 °C. The device supports a continuous collector current of 60 A at 110 °C and has a reverse biased safe operating area (RBSOA) of 108 A under clamped inductive load conditions. It meets RoHS standards and is suitable for power inverters, UPS, welding machines, and PFC circuits.
IGBT TRENCH FS 650V 134A TO-263
| DigiKey | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 238-IXYA60N65A5-ND |
| Product Name | Single IGBTs |
| TJ | -55 to 175 C (-67 to 347 F) |