The IXYA55N65B5 is a 650 V, 55 A Gen5 XPT™ IGBT in a TO-263-2L package, optimized for switching applications between 5 and 30 kHz. It features a collector-emitter saturation voltage of up to 1.50 V at 36 A and 15 V gate drive, with a thermal resistance junction-to-case of 0.38 °C/W. The device supports a pulsed collector current of 250 A and operates at junction temperatures up to 175 °C. Its reverse biased safe operating area is rated up to 108 A, and it meets international standard package requirements.
IGBT TRENCH FS 650V 122A TO-263
| DigiKey | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 238-IXYA55N65B5-ND |
| Product Name | Single IGBTs |
| TJ | -55 to 175 C (-67 to 347 F) |
