IGBT PT 650V 160A 625W Through Hole TO-247 (IXXH)
IGBT 650V 160A 625W TO247AD
Win Source Part Number: 1378712-IXXH80N65B4
Category: Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Fake Threat In the Open Market: 60 pct.
MSL Level: 1 (Unlimited)
Mfr: IXYS
Series: GenX4™, XPT™
Package: Tube
Product Status: Active
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXXH)
Base Product Number: IXXH80
Mounting Type: Through Hole
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99
Test Condition: 400V, 80A, 3Ohm, 15V
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 625 W
Input Type: Standard
IGBT Type: PT
Current - Collector Pulsed (Icm): 430 A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
Switching Energy: 3.77mJ (on), 1.2mJ (off)
Gate Charge: 120 nC
Td (on/off) @ 25°C: 38ns/120ns
IGBT 650V 160A 625W TO247AD
IGBT Transistors 650V/160A TRENCH IGBT GENX4 XPT
| DigiKey | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXXH80N65B4-ND | IXXH80N65B4 | 1378712-IXXH80N65B4 | IXXH80N65B4 | IXXH80N65B4 |
| Product Name | Single IGBTs | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Transistors |
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
