IXYS Corporation IGBTs - Single - IXXH75N60B3D1 IXXH75N60B3D1

Description
Manufacturer: IXYS Win Source Part Number: 1049985-IXXH75N60B3D 1 Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 25ns IGBT Type: PT Input Type: Standard Gate Charge: 107nC Categories: Discrete Semiconductor Products Status: Active Case / Package: TO-247 (IXXH) Maximum Current Collector: 160A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 750W Pulsed Collector Current: 300A Collector-emitter saturation voltage(Max): 1.85V @ 15V, 60A Total Switching Energy(Ets): 1.7mJ (on), 1.5mJ (off) Turn-on and Turn-off delay time: 35ns/118ns Testing Conditions: 400V, 60A, 5 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance
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Description
Manufacturer: IXYS Win Source Part Number: 1049985-IXXH75N60B3D 1 Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 25ns IGBT Type: PT Input Type: Standard Gate Charge: 107nC Categories: Discrete Semiconductor Products Status: Active Case / Package: TO-247 (IXXH) Maximum Current Collector: 160A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 750W Pulsed Collector Current: 300A Collector-emitter saturation voltage(Max): 1.85V @ 15V, 60A Total Switching Energy(Ets): 1.7mJ (on), 1.5mJ (off) Turn-on and Turn-off delay time: 35ns/118ns Testing Conditions: 400V, 60A, 5 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
IGBTs - Single - IXXH75N60B3D1 - 1049985-IXXH75N60B3D1 - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - IXXH75N60B3D1
1049985-IXXH75N60B3D1
IGBTs - Single - IXXH75N60B3D1 1049985-IXXH75N60B3D1
Manufacturer: IXYS Win Source Part Number: 1049985-IXXH75N60B3D 1 Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 25ns IGBT Type: PT Input Type: Standard Gate Charge: 107nC Categories: Discrete Semiconductor Products Status: Active Case / Package: TO-247 (IXXH) Maximum Current Collector: 160A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 750W Pulsed Collector Current: 300A Collector-emitter saturation voltage(Max): 1.85V @ 15V, 60A Total Switching Energy(Ets): 1.7mJ (on), 1.5mJ (off) Turn-on and Turn-off delay time: 35ns/118ns Testing Conditions: 400V, 60A, 5 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance

Manufacturer: IXYS
Win Source Part Number: 1049985-IXXH75N60B3D1
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 25ns
IGBT Type: PT
Input Type: Standard
Gate Charge: 107nC
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: TO-247 (IXXH)
Maximum Current Collector: 160A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 750W
Pulsed Collector Current: 300A
Collector-emitter saturation voltage(Max): 1.85V @ 15V, 60A
Total Switching Energy(Ets): 1.7mJ (on), 1.5mJ (off)
Turn-on and Turn-off delay time: 35ns/118ns
Testing Conditions: 400V, 60A, 5 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance

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Single IGBTs - IXXH75N60B3D1 - ODG (Origin Data Global)
Shenzhen, China
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Supplier's Site
Discrete Semiconductor Products - Transistors - IGBTs - IXXH75N60B3D1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
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IGBT 600V 160A 750W TO247

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Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Utmel Electronic Limited ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 1049985-IXXH75N60B3D1 IXXH75N60B3D1-ND IXXH75N60B3D1 401-IXXH75N60B3D1 IXXH75N60B3D1 IXXH75N60B3D1
Product Name IGBTs - Single - IXXH75N60B3D1 Single IGBTs IGBT Transistors IGBT Transistors XPT 600V IGBT GenX3 XPT IGBTs Single IGBTs Discrete Semiconductor Products - Transistors - IGBTs
VCE(on) 1.85 volts
PD 750000 milliwatts 750000 milliwatts
Package Type TO-247; SOT3; TO-247 (IXXH) TO-247; TO-247-3 TO-247; TO-247-3
Packing Method Rail; Tube; Tube/Rail Tube Tube; Tube Tube; Tube
Structure PT
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