IXYS Corporation Single IGBTs IXXH75N60B3D1

Description
IGBT PT 600V 160A 750W Through Hole TO-247 (IXXH)
Request a Quote Datasheet
Description
IGBT PT 600V 160A 750W Through Hole TO-247 (IXXH)
Request a Quote Datasheet

Suppliers

Company
Product
Description
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Single IGBTs - IXXH75N60B3D1-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
IXXH75N60B3D1-ND
Single IGBTs IXXH75N60B3D1-ND
IGBT PT 600V 160A 750W Through Hole TO-247 (IXXH)

IGBT PT 600V 160A 750W Through Hole TO-247 (IXXH)

Buy Now Datasheet
IGBTs - Single - IXXH75N60B3D1 - 1049985-IXXH75N60B3D1 - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - IXXH75N60B3D1
1049985-IXXH75N60B3D1
IGBTs - Single - IXXH75N60B3D1 1049985-IXXH75N60B3D1
Manufacturer: IXYS Win Source Part Number: 1049985-IXXH75N60B3D 1 Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 25ns IGBT Type: PT Input Type: Standard Gate Charge: 107nC Categories: Discrete Semiconductor Products Status: Active Case / Package: TO-247 (IXXH) Maximum Current Collector: 160A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 750W Pulsed Collector Current: 300A Collector-emitter saturation voltage(Max): 1.85V @ 15V, 60A Total Switching Energy(Ets): 1.7mJ (on), 1.5mJ (off) Turn-on and Turn-off delay time: 35ns/118ns Testing Conditions: 400V, 60A, 5 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance

Manufacturer: IXYS
Win Source Part Number: 1049985-IXXH75N60B3D1
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 25ns
IGBT Type: PT
Input Type: Standard
Gate Charge: 107nC
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: TO-247 (IXXH)
Maximum Current Collector: 160A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 750W
Pulsed Collector Current: 300A
Collector-emitter saturation voltage(Max): 1.85V @ 15V, 60A
Total Switching Energy(Ets): 1.7mJ (on), 1.5mJ (off)
Turn-on and Turn-off delay time: 35ns/118ns
Testing Conditions: 400V, 60A, 5 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance

Buy Now
Sheung Wan, Hong Kong
IGBT Transistors
IXXH75N60B3D1
IGBT Transistors IXXH75N60B3D1
IGBT Transistors XPT 600V IGBT GenX3 XPT IGBTs

IGBT Transistors XPT 600V IGBT GenX3 XPT IGBTs

Buy Now Datasheet
IGBT Transistors XPT 600V IGBT GenX3 XPT IGBTs - 401-IXXH75N60B3D1 - Utmel Electronic Limited
Hong Kong, China
IGBT Transistors XPT 600V IGBT GenX3 XPT IGBTs
401-IXXH75N60B3D1
IGBT Transistors XPT 600V IGBT GenX3 XPT IGBTs 401-IXXH75N60B3D1
IGBT Transistors XPT 600V IGBT GenX3 XPT IGBTs

IGBT Transistors XPT 600V IGBT GenX3 XPT IGBTs

Supplier's Site
Discrete Semiconductor Products - Transistors - IGBTs - IXXH75N60B3D1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
IXXH75N60B3D1
Discrete Semiconductor Products - Transistors - IGBTs IXXH75N60B3D1
IGBT 600V 160A 750W TO247

IGBT 600V 160A 750W TO247

Supplier's Site
Single IGBTs - IXXH75N60B3D1 - ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
IXXH75N60B3D1
Single IGBTs IXXH75N60B3D1
IGBT 600V 160A 750W TO247

IGBT 600V 160A 750W TO247

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IXXH75N60B3D1-ND 1049985-IXXH75N60B3D1 IXXH75N60B3D1 401-IXXH75N60B3D1 IXXH75N60B3D1 IXXH75N60B3D1
Product Name Single IGBTs IGBTs - Single - IXXH75N60B3D1 IGBT Transistors IGBT Transistors XPT 600V IGBT GenX3 XPT IGBTs Discrete Semiconductor Products - Transistors - IGBTs Single IGBTs
Package Type TO-247; TO-247-3 TO-247; SOT3; TO-247 (IXXH) TO-247; TO-247-3
Packing Method Tube Rail; Tube; Tube/Rail Tube; Tube Tube; Tube
Structure PT
VCE(on) 1.85 volts
PD 750000 milliwatts 750000 milliwatts
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