IGBT 600V 60A 270W TO247
IGBT PT 600V 60A 270W Through Hole TO-247 (IXXH)
Manufacturer: IXYS
Win Source Part Number: 812062-IXXH30N60B3D1
Packaging: Tube
Mounting Style: Through Hole
Power - Max: 270W
Reverse Recovery Time (trr): 25ns
IGBT Type: PT
Current - Collector Pulsed (Icm): 115A
Switching Energy: 550μJ (on), 500μJ (off)
Input Type: Standard
Gate Charge: 39nC
Test Condition: 400V, 24A, 10Ohm, 15V
Supplier Device Package: TO-247 (IXXH)
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: TO-247-3
Current - Collector (Ic) (Maximum): 60A
Voltage - Collector Emitter Breakdown (Maximum): 600V
Popularity: Low
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 30
MSL Level: 1 (Unlimited)
Vce(on) (Maximum) at Vge, Ic: 1.85V at 15V, 24A
Td (on/off) at 25°C: 23ns/97ns
IGBT, LIGHT PUNCH THROUGH, ANTI-PARALLEL, ULTRA FAST DIODE, 600V, 60A, TO-247-3. FREE 2 YEAR RADWELL WARRANTY
IGBT Transistors XPT 600V IGBT GenX3 XPT IGBT
IGBT 600V 60A 270W TO247
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | Radwell International | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXXH30N60B3D1 | IXXH30N60B3D1-ND | 812062-IXXH30N60B3D1 | 220654273 | IXXH30N60B3D1 | IXXH30N60B3D1 |
| Product Name | Single IGBTs | Single IGBTs | IGBTs - Single - IXXH30N60B3D1 | IGBT | IGBT Transistors | Discrete Semiconductor Products - Transistors - IGBTs |
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
