IGBT PT 600V 60A 270W Through Hole TO-247 (IXXH)
Manufacturer: IXYS
Win Source Part Number: 1324506-IXXH30N60B3
Category: Discrete Semiconductor Products>Transistors
Packaging: Tube
Standard Package: 30
Mounting: Through Hole
Power - Max: 270 W
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 60 A
Current - Collector Pulsed (Icm): 115 A
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 24A
Switching Energy: 550µJ (on), 500µJ (off)
Input Type: Standard
Gate Charge: 39 nC
Td (on/off) @ 25°C: 23ns/97ns
Test Condition: 400V, 24A, 10Ohm, 15V
Supplier Device Package: TO-247 (IXXH)
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Case / Package: TO-247-3
ECCN: EAR99
Fake Threat In the Open Market: 68
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Base Product Number: IXXH30
RoHS Status: ROHS3 Compliant
IGBT Transistors DISC IGBT XPT-GENX3
INSULATED GATE, BIPOLAR, TRANSISTOR, 60A I(C), 600V V(BR)CES, N-CHANNEL, TO-247AD. FREE 2 YEAR RADWELL WARRANTY
IGBT 600V TO247
| DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Radwell International | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | RF Transistors | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXXH30N60B3-ND | 1324506-IXXH30N60B3 | IXXH30N60B3 | 154088559 | IXXH30N60B3 |
| Product Name | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs - Single | IGBT Transistors | Transistor | Discrete Semiconductor Products - Transistors - IGBTs |
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
