Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTX4N300P3HV IXTX4N300P3HV

Description
Manufacturer: IXYS Win Source Part Number: 777666-IXTX4N300P3HV Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Variant Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-247HV Channel Type Type: N Drain Source Voltage: 3000V Vgs(th) (Maximum) @ Id: 5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 139nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 3680pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 960W (Tc) Rds On (Maximum) @ Id, Vgs: 12.5 Ohm @ 2A, 10V Estimated EOL Date: 2029 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Limited
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Description
Manufacturer: IXYS Win Source Part Number: 777666-IXTX4N300P3HV Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Variant Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-247HV Channel Type Type: N Drain Source Voltage: 3000V Vgs(th) (Maximum) @ Id: 5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 139nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 3680pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 960W (Tc) Rds On (Maximum) @ Id, Vgs: 12.5 Ohm @ 2A, 10V Estimated EOL Date: 2029 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Limited
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Suppliers

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTX4N300P3HV - 777666-IXTX4N300P3HV - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTX4N300P3HV
777666-IXTX4N300P3HV
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTX4N300P3HV 777666-IXTX4N300P3HV
Manufacturer: IXYS Win Source Part Number: 777666-IXTX4N300P3HV Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Variant Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-247HV Channel Type Type: N Drain Source Voltage: 3000V Vgs(th) (Maximum) @ Id: 5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 139nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 3680pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 960W (Tc) Rds On (Maximum) @ Id, Vgs: 12.5 Ohm @ 2A, 10V Estimated EOL Date: 2029 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Limited

Manufacturer: IXYS
Win Source Part Number: 777666-IXTX4N300P3HV
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-247-3 Variant
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: TO-247HV
Channel Type Type: N
Drain Source Voltage: 3000V
Vgs(th) (Maximum) @ Id: 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 139nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 3680pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 960W (Tc)
Rds On (Maximum) @ Id, Vgs: 12.5 Ohm @ 2A, 10V
Estimated EOL Date: 2029
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
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Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 777666-IXTX4N300P3HV 238-IXTX4N300P3HV-ND IXTX4N300P3HV IXTX4N300P3HV
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTX4N300P3HV Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
QG 139 nC
PD 960000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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