Zilog Single FETs, MOSFETs IXTX110N20L2

Description
N-Channel 200V 110A (Tc) 960W (Tc) Through Hole PLUS247™-3
Request a Quote Datasheet
Description
N-Channel 200V 110A (Tc) 960W (Tc) Through Hole PLUS247™-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 238-IXTX110N20L2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXTX110N20L2-ND
Single FETs, MOSFETs 238-IXTX110N20L2-ND
N-Channel 200V 110A (Tc) 960W (Tc) Through Hole PLUS247™-3

N-Channel 200V 110A (Tc) 960W (Tc) Through Hole PLUS247™-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1337737-IXTX110N20L2 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
1337737-IXTX110N20L2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1337737-IXTX110N20L2
Win Source Part Number: 1337737-IXTX110N20L2 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: Linear L2™ Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 200 V Power Dissipation (Max): 960W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Supplier Device Package: PLUS247™-3 Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 43 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXTX110 Drive Voltage (Max Rds On, Min Rds On): 10V California Prop 65: Warning Information Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 55A, 10V Vgs(th) (Max) @ Id: 4.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V

Win Source Part Number: 1337737-IXTX110N20L2
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Series: Linear L2™
Package: Tube
Standard Package: 30
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 200 V
Power Dissipation (Max): 960W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Supplier Device Package: PLUS247™-3
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 43 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Base Product Number: IXTX110
Drive Voltage (Max Rds On, Min Rds On): 10V
California Prop 65: Warning Information
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 55A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTX110N20L2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTX110N20L2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTX110N20L2
MOSFET N-CH 200V 110A PLUS247-3

MOSFET N-CH 200V 110A PLUS247-3

Supplier's Site
Single FETs, MOSFETs - IXTX110N20L2 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXTX110N20L2
Single FETs, MOSFETs IXTX110N20L2
MOSFET N-CH 200V 110A PLUS247-3

MOSFET N-CH 200V 110A PLUS247-3

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET LINEAR L2 SERIES MOSFET 200V 110A

MOSFET LINEAR L2 SERIES MOSFET 200V 110A

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global) VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 238-IXTX110N20L2-ND 1337737-IXTX110N20L2 IXTX110N20L2 IXTX110N20L2 IXTX110N20L2
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel N-Channel; N-Channel
Package Type TO-247; TO-247-3 Variant SOT3 TO-247; TO-247-3 Variant TO-247; TO-247-3 Variant
PD 960000 milliwatts 960000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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