Zilog Single FETs, MOSFETs IXTX110N20L2

Description
N-Channel 200V 110A (Tc) 960W (Tc) Through Hole PLUS247™-3
Request a Quote Datasheet
Description
N-Channel 200V 110A (Tc) 960W (Tc) Through Hole PLUS247™-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 238-IXTX110N20L2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXTX110N20L2-ND
Single FETs, MOSFETs 238-IXTX110N20L2-ND
N-Channel 200V 110A (Tc) 960W (Tc) Through Hole PLUS247™-3

N-Channel 200V 110A (Tc) 960W (Tc) Through Hole PLUS247™-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1337737-IXTX110N20L2 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
1337737-IXTX110N20L2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1337737-IXTX110N20L2
Win Source Part Number: 1337737-IXTX110N20L2 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: Linear L2™ Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 200 V Power Dissipation (Max): 960W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Supplier Device Package: PLUS247™-3 Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 43 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXTX110 Drive Voltage (Max Rds On, Min Rds On): 10V California Prop 65: Warning Information Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 55A, 10V Vgs(th) (Max) @ Id: 4.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V

Win Source Part Number: 1337737-IXTX110N20L2
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Series: Linear L2™
Package: Tube
Standard Package: 30
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 200 V
Power Dissipation (Max): 960W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Supplier Device Package: PLUS247™-3
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 43 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Base Product Number: IXTX110
Drive Voltage (Max Rds On, Min Rds On): 10V
California Prop 65: Warning Information
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 55A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET LINEAR L2 SERIES MOSFET 200V 110A

MOSFET LINEAR L2 SERIES MOSFET 200V 110A

Buy Now Datasheet
Single FETs, MOSFETs - IXTX110N20L2 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXTX110N20L2
Single FETs, MOSFETs IXTX110N20L2
MOSFET N-CH 200V 110A PLUS247-3

MOSFET N-CH 200V 110A PLUS247-3

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTX110N20L2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTX110N20L2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTX110N20L2
MOSFET N-CH 200V 110A PLUS247-3

MOSFET N-CH 200V 110A PLUS247-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 238-IXTX110N20L2-ND 1337737-IXTX110N20L2 IXTX110N20L2 IXTX110N20L2 IXTX110N20L2
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs MOSFET Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel; N-Channel
Package Type TO-247; TO-247-3 Variant SOT3 TO-247; TO-247-3 Variant TO-247; TO-247-3 Variant
PD 960000 milliwatts 960000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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