Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTT52N30P IXTT52N30P

Description
Manufacturer: IXYS Win Source Part Number: 1191300-IXTT52N30P Series: PolarHT Packaging: Tube Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Family Name: IXTT52N30P Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.ixys.com RoHS State: Request Verification Manufacturer Package: TO-268 Channel Type Type: N Drain Source Voltage: 300V Vgs(th) (Maximum) @ Id: 5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 3490pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 400W (Tc) Rds On (Maximum) @ Id, Vgs: 66 mOhm @ 500mA, 10V Alternative Parts (Cross-Reference): APT30M61SLL; APT30M61SFLL; APT30M70SVRG; Introduction Date: November 04, 2003 ECCN: EAR99 Country of Origin: Republic of Korea Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTT52N30P - 1191300-IXTT52N30P - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IXTT52N30P-ND - DigiKey
    DigiKey
  • Trans MOSFET N-CH 300V 52A 3-Pin(2+Tab) TO-268 - 401-IXTT52N30P - Utmel Electronic Limited
    Utmel Electronic Limited
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTT52N30P - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: IXYS Win Source Part Number: 1191300-IXTT52N30P Series: PolarHT Packaging: Tube Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Family Name: IXTT52N30P Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.ixys.com RoHS State: Request Verification Manufacturer Package: TO-268 Channel Type Type: N Drain Source Voltage: 300V Vgs(th) (Maximum) @ Id: 5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 3490pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 400W (Tc) Rds On (Maximum) @ Id, Vgs: 66 mOhm @ 500mA, 10V Alternative Parts (Cross-Reference): APT30M61SLL; APT30M61SFLL; APT30M70SVRG; Introduction Date: November 04, 2003 ECCN: EAR99 Country of Origin: Republic of Korea Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTT52N30P - 1191300-IXTT52N30P - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTT52N30P
1191300-IXTT52N30P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTT52N30P 1191300-IXTT52N30P
Manufacturer: IXYS Win Source Part Number: 1191300-IXTT52N30P Series: PolarHT Packaging: Tube Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Family Name: IXTT52N30P Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.ixys.com RoHS State: Request Verification Manufacturer Package: TO-268 Channel Type Type: N Drain Source Voltage: 300V Vgs(th) (Maximum) @ Id: 5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 3490pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 400W (Tc) Rds On (Maximum) @ Id, Vgs: 66 mOhm @ 500mA, 10V Alternative Parts (Cross-Reference): APT30M61SLL; APT30M61SFLL; APT30M70SVRG; Introduction Date: November 04, 2003 ECCN: EAR99 Country of Origin: Republic of Korea Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited

Manufacturer: IXYS
Win Source Part Number: 1191300-IXTT52N30P
Series: PolarHT
Packaging: Tube
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Family Name: IXTT52N30P
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.ixys.com
RoHS State: Request Verification
Manufacturer Package: TO-268
Channel Type Type: N
Drain Source Voltage: 300V
Vgs(th) (Maximum) @ Id: 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 110nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 3490pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 400W (Tc)
Rds On (Maximum) @ Id, Vgs: 66 mOhm @ 500mA, 10V
Alternative Parts (Cross-Reference): APT30M61SLL; APT30M61SFLL; APT30M70SVRG;
Introduction Date: November 04, 2003
ECCN: EAR99
Country of Origin: Republic of Korea
Estimated EOL Date: 2024
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - IXTT52N30P-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTT52N30P-ND
Single FETs, MOSFETs IXTT52N30P-ND
N-Channel 300V 52A (Tc) 400W (Tc) Surface Mount TO-268AA

N-Channel 300V 52A (Tc) 400W (Tc) Surface Mount TO-268AA

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IXTT52N30P
MOSFET IXTT52N30P
MOSFET 52 Amps 300V 0.066 Rds

MOSFET 52 Amps 300V 0.066 Rds

Buy Now Datasheet
Trans MOSFET N-CH 300V 52A 3-Pin(2+Tab) TO-268 - 401-IXTT52N30P - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
Trans MOSFET N-CH 300V 52A 3-Pin(2+Tab) TO-268
401-IXTT52N30P
Trans MOSFET N-CH 300V 52A 3-Pin(2+Tab) TO-268 401-IXTT52N30P
Trans MOSFET N-CH 300V 52A 3-Pin(2+Tab) TO-268

Trans MOSFET N-CH 300V 52A 3-Pin(2+Tab) TO-268

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTT52N30P - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTT52N30P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTT52N30P
MOSFET N-CH 300V 52A TO268

MOSFET N-CH 300V 52A TO268

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1191300-IXTT52N30P IXTT52N30P-ND IXTT52N30P 401-IXTT52N30P IXTT52N30P
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTT52N30P Single FETs, MOSFETs MOSFET Trans MOSFET N-CH 300V 52A 3-Pin(2+Tab) TO-268 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
QG 110 nC
PD 400000 milliwatts 400000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3 TO-268-3, D3PAK (2 Leads + Tab), TO-268AA TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Packing Method Tube; Tube Tube; Tube Tube; Tube
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