Manufacturer: IXYS
Win Source Part Number: 1191299-IXTT30N60L2
Packaging: Tube
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-268
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Power Dissipation (Maximum): 540W
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 30
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 600V
Id - Continuous Drain Current: 30A
Rds On (Maximum) at Id, Vgs: 240mOhm at 15A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 335nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 10700pF at 25V
N-Channel 600V 30A (Tc) 540W (Tc) Surface Mount TO-268AA
MOSFET N-CH 600V 30A TO268
MOSFET N-CH 600V 30A TO268
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Power MOSFET | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1191299-IXTT30N60L2 | 238-IXTT30N60L2-ND | IXTT30N60L2 | IXTT30N60L2 | IXTT30N60L2 |
| Product Name | FETs - Single - IXTT30N60L2 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||
| V(BR)DSS | 600 volts | 600 volts | |||
| QG | 335 nC | ||||
| PD | 540000 milliwatts | 540000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
