Zilog Single FETs, MOSFETs IXTT16N10D2

Description
N-Channel 100V 16A (Tc) 830W (Tc) Surface Mount TO-268AA
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Description
N-Channel 100V 16A (Tc) 830W (Tc) Surface Mount TO-268AA
Request a Quote Datasheet

Suppliers

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Product
Description
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Single FETs, MOSFETs - IXTT16N10D2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTT16N10D2-ND
Single FETs, MOSFETs IXTT16N10D2-ND
N-Channel 100V 16A (Tc) 830W (Tc) Surface Mount TO-268AA

N-Channel 100V 16A (Tc) 830W (Tc) Surface Mount TO-268AA

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTT16N10D2 - 1191297-IXTT16N10D2 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTT16N10D2
1191297-IXTT16N10D2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTT16N10D2 1191297-IXTT16N10D2
Manufacturer: IXYS Win Source Part Number: 1191297-IXTT16N10D2 Packaging: Tube Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Mounting: SMD Technology: MOSFET FET Feature: Depletion Mode Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Family Name: IXTT16N10D2 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 0V Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-268 Channel Type Type: N Drain Source Voltage: 100V Gate Charge (Qg) (Maximum) @ Vgs: 225nC @ 5V Input Capacitance (Ciss) (Maximum) @ Vds: 5700pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 830W (Tc) Rds On (Maximum) @ Id, Vgs: 64 mOhm @ 8A, 0V Introduction Date: April 13, 2010 ECCN: EAR99 Country of Origin: Republic of Korea Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Limited

Manufacturer: IXYS
Win Source Part Number: 1191297-IXTT16N10D2
Packaging: Tube
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Mounting: SMD
Technology: MOSFET
FET Feature: Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Family Name: IXTT16N10D2
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 0V
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-268
Channel Type Type: N
Drain Source Voltage: 100V
Gate Charge (Qg) (Maximum) @ Vgs: 225nC @ 5V
Input Capacitance (Ciss) (Maximum) @ Vds: 5700pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 830W (Tc)
Rds On (Maximum) @ Id, Vgs: 64 mOhm @ 8A, 0V
Introduction Date: April 13, 2010
ECCN: EAR99
Country of Origin: Republic of Korea
Estimated EOL Date: 2024
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Limited

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Sheung Wan, Hong Kong
MOSFET D2 Depletion Mode Power MOSFETs

MOSFET D2 Depletion Mode Power MOSFETs

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTT16N10D2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTT16N10D2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTT16N10D2
MOSFET N-CH 100V 16A TO268

MOSFET N-CH 100V 16A TO268

Supplier's Site
MOSFET D2 Depletion Mode Power MOSFETs - 401-IXTT16N10D2 - Utmel Electronic Limited
Hong Kong, China
MOSFET D2 Depletion Mode Power MOSFETs
401-IXTT16N10D2
MOSFET D2 Depletion Mode Power MOSFETs 401-IXTT16N10D2
MOSFET D2 Depletion Mode Power MOSFETs

MOSFET D2 Depletion Mode Power MOSFETs

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Power MOSFET
Product Number IXTT16N10D2-ND 1191297-IXTT16N10D2 IXTT16N10D2 IXTT16N10D2 401-IXTT16N10D2
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTT16N10D2 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET D2 Depletion Mode Power MOSFETs
Polarity N-Channel
Package Type TO-268-3, D3PAK (2 Leads + Tab), TO-268AA SOT3 Surface Mount
MOSFET Operating Mode Depletion
PD 830000 milliwatts 830000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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