Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTT140N10P IXTT140N10P

Description
Manufacturer: IXYS Win Source Part Number: 1191296-IXTT140N10P Series: PolarHT Packaging: Tube Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Family Name: IXTT140N10P Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Manufacturer Homepage: www.ixys.com RoHS State: Request Verification Manufacturer Package: TO-268 Channel Type Type: N Drain Source Voltage: 100V Vgs(th) (Maximum) @ Id: 5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 155nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 4700pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 600W (Tc) Rds On (Maximum) @ Id, Vgs: 11 mOhm @ 70A, 10V Alternative Parts (Cross-Reference): IXTT140N10P-TRL; Introduction Date: May 07, 2004 ECCN: EAR99 Country of Origin: Republic of Korea Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited
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Description
Manufacturer: IXYS Win Source Part Number: 1191296-IXTT140N10P Series: PolarHT Packaging: Tube Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Family Name: IXTT140N10P Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Manufacturer Homepage: www.ixys.com RoHS State: Request Verification Manufacturer Package: TO-268 Channel Type Type: N Drain Source Voltage: 100V Vgs(th) (Maximum) @ Id: 5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 155nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 4700pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 600W (Tc) Rds On (Maximum) @ Id, Vgs: 11 mOhm @ 70A, 10V Alternative Parts (Cross-Reference): IXTT140N10P-TRL; Introduction Date: May 07, 2004 ECCN: EAR99 Country of Origin: Republic of Korea Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTT140N10P - 1191296-IXTT140N10P - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTT140N10P
1191296-IXTT140N10P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTT140N10P 1191296-IXTT140N10P
Manufacturer: IXYS Win Source Part Number: 1191296-IXTT140N10P Series: PolarHT Packaging: Tube Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Family Name: IXTT140N10P Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Manufacturer Homepage: www.ixys.com RoHS State: Request Verification Manufacturer Package: TO-268 Channel Type Type: N Drain Source Voltage: 100V Vgs(th) (Maximum) @ Id: 5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 155nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 4700pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 600W (Tc) Rds On (Maximum) @ Id, Vgs: 11 mOhm @ 70A, 10V Alternative Parts (Cross-Reference): IXTT140N10P-TRL; Introduction Date: May 07, 2004 ECCN: EAR99 Country of Origin: Republic of Korea Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited

Manufacturer: IXYS
Win Source Part Number: 1191296-IXTT140N10P
Series: PolarHT
Packaging: Tube
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Family Name: IXTT140N10P
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Manufacturer Homepage: www.ixys.com
RoHS State: Request Verification
Manufacturer Package: TO-268
Channel Type Type: N
Drain Source Voltage: 100V
Vgs(th) (Maximum) @ Id: 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 155nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 4700pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 600W (Tc)
Rds On (Maximum) @ Id, Vgs: 11 mOhm @ 70A, 10V
Alternative Parts (Cross-Reference): IXTT140N10P-TRL;
Introduction Date: May 07, 2004
ECCN: EAR99
Country of Origin: Republic of Korea
Estimated EOL Date: 2024
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - 238-IXTT140N10P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXTT140N10P-ND
Single FETs, MOSFETs 238-IXTT140N10P-ND
N-Channel 100V 140A (Tc) 600W (Tc) Surface Mount TO-268AA

N-Channel 100V 140A (Tc) 600W (Tc) Surface Mount TO-268AA

Buy Now Datasheet
Trans MOSFET N-CH 100V 140A 3-Pin(2+Tab) TO-268 - 401-IXTT140N10P - Utmel Electronic Limited
Hong Kong, China
Trans MOSFET N-CH 100V 140A 3-Pin(2+Tab) TO-268
401-IXTT140N10P
Trans MOSFET N-CH 100V 140A 3-Pin(2+Tab) TO-268 401-IXTT140N10P
Trans MOSFET N-CH 100V 140A 3-Pin(2+Tab) TO-268

Trans MOSFET N-CH 100V 140A 3-Pin(2+Tab) TO-268

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTT140N10P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTT140N10P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTT140N10P
MOSFET N-CH 100V 140A TO268

MOSFET N-CH 100V 140A TO268

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1191296-IXTT140N10P 238-IXTT140N10P-ND 401-IXTT140N10P IXTT140N10P
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTT140N10P Single FETs, MOSFETs Trans MOSFET N-CH 100V 140A 3-Pin(2+Tab) TO-268 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
QG 155 nC
PD 600000 milliwatts 600000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type SOT3 TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Surface Mount
Packing Method Tube; Tube Tube; Tube Tube; Tube
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