Zilog Single FETs, MOSFETs IXTQ50N20P

Description
N-Channel 200V 50A (Tc) 360W (Tc) Through Hole TO-3P
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Description
N-Channel 200V 50A (Tc) 360W (Tc) Through Hole TO-3P
Request a Quote Datasheet

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Single FETs, MOSFETs - 238-IXTQ50N20P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXTQ50N20P-ND
Single FETs, MOSFETs 238-IXTQ50N20P-ND
N-Channel 200V 50A (Tc) 360W (Tc) Through Hole TO-3P

N-Channel 200V 50A (Tc) 360W (Tc) Through Hole TO-3P

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ50N20P - 1191293-IXTQ50N20P - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ50N20P
1191293-IXTQ50N20P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ50N20P 1191293-IXTQ50N20P
Manufacturer: IXYS Win Source Part Number: 1191293-IXTQ50N20P Series: PolarHT Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-3P-3, SC-65-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Family Name: IXTQ50N20P Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-3P Channel Type Type: N Drain Source Voltage: 200V Vgs(th) (Maximum) @ Id: 5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 2720pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 360W (Tc) Rds On (Maximum) @ Id, Vgs: 60 mOhm @ 50A, 10V Alternative Parts (Cross-Reference): FQAF48N20; FQA48N20; FQA48N20_NL; Introduction Date: May 17, 2004 ECCN: EAR99 Country of Origin: Republic of Korea Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Sufficient

Manufacturer: IXYS
Win Source Part Number: 1191293-IXTQ50N20P
Series: PolarHT
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-3P-3, SC-65-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Family Name: IXTQ50N20P
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-3P
Channel Type Type: N
Drain Source Voltage: 200V
Vgs(th) (Maximum) @ Id: 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 70nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 2720pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 360W (Tc)
Rds On (Maximum) @ Id, Vgs: 60 mOhm @ 50A, 10V
Alternative Parts (Cross-Reference): FQAF48N20; FQA48N20; FQA48N20_NL;
Introduction Date: May 17, 2004
ECCN: EAR99
Country of Origin: Republic of Korea
Estimated EOL Date: 2024
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Sufficient

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Sheung Wan, Hong Kong
MOSFET 50 Amps 200V 0.06 Rds

MOSFET 50 Amps 200V 0.06 Rds

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTQ50N20P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTQ50N20P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTQ50N20P
MOSFET N-CH 200V 50A TO3P

MOSFET N-CH 200V 50A TO3P

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Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 238-IXTQ50N20P-ND 1191293-IXTQ50N20P IXTQ50N20P IXTQ50N20P
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ50N20P MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
Package Type TO-3; TO-3P-3, SC-65-3 TO-3; SOT3 TO-3P-3, SC-65-3
Operating Mode Enhancement
QG 70 nC
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