Zilog Single FETs, MOSFETs IXTP8N50PM

Description
N-Channel 500V 4A (Tc) 41W (Tc) Through Hole TO-220-3
Request a Quote Datasheet
Description
N-Channel 500V 4A (Tc) 41W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

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Product
Description
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Single FETs, MOSFETs - IXTP8N50PM-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTP8N50PM-ND
Single FETs, MOSFETs IXTP8N50PM-ND
N-Channel 500V 4A (Tc) 41W (Tc) Through Hole TO-220-3

N-Channel 500V 4A (Tc) 41W (Tc) Through Hole TO-220-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP8N50PM - 1049904-IXTP8N50PM - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP8N50PM
1049904-IXTP8N50PM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP8N50PM 1049904-IXTP8N50PM
Manufacturer: IXYS Win Source Part Number: 1049904-IXTP8N50PM Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 41W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 4A (Tc) Gate-Source Threshold Voltage: 5.5V @ 250μA Max Gate Charge: 20nC @ 10V Max Input Capacitance: 1050pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 800 mOhm @ 4A, 10V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance

Manufacturer: IXYS
Win Source Part Number: 1049904-IXTP8N50PM
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 41W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 4A (Tc)
Gate-Source Threshold Voltage: 5.5V @ 250μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 1050pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 800 mOhm @ 4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTP8N50PM - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTP8N50PM
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTP8N50PM
MOSFET N-CH 500V 4A TO220AB

MOSFET N-CH 500V 4A TO220AB

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IXTP8N50PM-ND 1049904-IXTP8N50PM IXTP8N50PM
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP8N50PM Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220AB TO-220; TO-220-3
V(BR)DSS 500 volts
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