Manufacturer: IXYS
Win Source Part Number: 1323895-IXTP6N100D2
Category: Discrete Semiconductor Products>Transistors
Packaging: Tube
Standard Package: 50
Mounting: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
FET Feature: Depletion Mode
Drain to Source Voltage (Vdss): 1000 V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 3A, 0V
Power Dissipation (Max): 300W (Tc)
Supplier Device Package: TO-220-3
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: TO-220-3
ECCN: EAR99
Fake Threat In the Open Market: 78
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Base Product Number: IXTP6
RoHS Status: ROHS3 Compliant
N-Channel 1000V 6A (Tc) 300W (Tc) Through Hole TO-220-3
MOSFET N-CH MOSFETS (D2) 1000V 6A
MOSFET N-CH 1000V 6A TO220AB
| Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1323895-IXTP6N100D2 | 238-IXTP6N100D2-ND | IXTP6N100D2 | IXTP6N100D2 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | ||
| MOSFET Operating Mode | Depletion | |||
| PD | 300000 milliwatts |
