N-Channel 200V 60A (Tc) 500W (Tc) Through Hole TO-220-3
Manufacturer: IXYS
Win Source Part Number: 1049897-IXTP60N20T
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 500W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 60A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 73nC @ 10V
Max Input Capacitance: 4530pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 40 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance
MOSFET N-CH 200V 60A TO220AB
MOSFET Trench POWER MOSFETs 200v, 60A
MOSFET Trench POWER MOSFETs 200v, 60A
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXTP60N20T-ND | 1049897-IXTP60N20T | IXTP60N20T | 401-IXTP60N20T | IXTP60N20T |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP60N20T | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET Trench POWER MOSFETs 200v, 60A | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | |||
| Package Type | TO-220; TO-220-3 | TO-220; SOT3; TO-220AB | TO-220; TO-220-3 | ||
| V(BR)DSS | 200 volts | 200 volts | |||
| PD | 500000 milliwatts | 500000 milliwatts | |||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
