N-Channel 100V 60A (Tc) 176W (Tc) Through Hole TO-220-3
Manufacturer: IXYS
Win Source Part Number: 205713-IXTP60N10T
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 176W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 60A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 50μA
Max Gate Charge: 49nC @ 10V
Max Input Capacitance: 2650pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 18 mOhm @ 25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited
Quantity per package: 50
MOSFET N-CH 100V 60A TO-220
MOSFET N-CH 100V 60A TO220AB
| DigiKey | Win Source Electronics | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IXTP60N10T-ND | 205713-IXTP60N10T | 401-IXTP60N10T | IXTP60N10T | IXTP60N10T |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP60N10T | MOSFET N-CH 100V 60A TO-220 | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | |||
| Package Type | TO-220; TO-220-3 | TO-220; SOT3; TO-220AB | TO-220; TO-220-3 | ||
| V(BR)DSS | 100 volts | 100 volts | |||
| PD | 176000 milliwatts | 176000 milliwatts | |||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
