Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP60N10T IXTP60N10T

Description
Manufacturer: IXYS Win Source Part Number: 205713-IXTP60N10T Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 176W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 60A (Tc) Gate-Source Threshold Voltage: 4.5V @ 50μA Max Gate Charge: 49nC @ 10V Max Input Capacitance: 2650pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 18 mOhm @ 25A, 10V Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited Quantity per package: 50
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP60N10T - 205713-IXTP60N10T - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IXTP60N10T-ND - DigiKey
    DigiKey
  • MOSFET N-CH 100V 60A TO-220 - 401-IXTP60N10T - Utmel Electronic Limited
    Utmel Electronic Limited
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTP60N10T - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: IXYS Win Source Part Number: 205713-IXTP60N10T Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 176W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 60A (Tc) Gate-Source Threshold Voltage: 4.5V @ 50μA Max Gate Charge: 49nC @ 10V Max Input Capacitance: 2650pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 18 mOhm @ 25A, 10V Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited Quantity per package: 50
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP60N10T - 205713-IXTP60N10T - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP60N10T
205713-IXTP60N10T
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP60N10T 205713-IXTP60N10T
Manufacturer: IXYS Win Source Part Number: 205713-IXTP60N10T Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 176W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 60A (Tc) Gate-Source Threshold Voltage: 4.5V @ 50μA Max Gate Charge: 49nC @ 10V Max Input Capacitance: 2650pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 18 mOhm @ 25A, 10V Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited Quantity per package: 50

Manufacturer: IXYS
Win Source Part Number: 205713-IXTP60N10T
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 176W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 60A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 50μA
Max Gate Charge: 49nC @ 10V
Max Input Capacitance: 2650pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 18 mOhm @ 25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited
Quantity per package: 50

Buy Now Datasheet
Single FETs, MOSFETs - IXTP60N10T-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTP60N10T-ND
Single FETs, MOSFETs IXTP60N10T-ND
N-Channel 100V 60A (Tc) 176W (Tc) Through Hole TO-220-3

N-Channel 100V 60A (Tc) 176W (Tc) Through Hole TO-220-3

Buy Now Datasheet
MOSFET N-CH 100V 60A TO-220 - 401-IXTP60N10T - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 100V 60A TO-220
401-IXTP60N10T
MOSFET N-CH 100V 60A TO-220 401-IXTP60N10T
MOSFET N-CH 100V 60A TO-220

MOSFET N-CH 100V 60A TO-220

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTP60N10T - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTP60N10T
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTP60N10T
MOSFET N-CH 100V 60A TO220AB

MOSFET N-CH 100V 60A TO220AB

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IXTP60N10T
MOSFET IXTP60N10T
MOSFET MOSFET Id60 BVdass100

MOSFET MOSFET Id60 BVdass100

Buy Now

Technical Specifications

  Win Source Electronics DigiKey Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 205713-IXTP60N10T IXTP60N10T-ND 401-IXTP60N10T IXTP60N10T IXTP60N10T
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP60N10T Single FETs, MOSFETs MOSFET N-CH 100V 60A TO-220 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 100 volts 100 volts
PD 176000 milliwatts 176000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-220; SOT3; TO-220AB TO-220; TO-220-3 TO-220; TO-220-3
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