Manufacturer: IXYS
Win Source Part Number: 777661-IXTP3N100D2
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-220-3
Technology: MOSFET
FET Feature: Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Family Name: IXTP3N100D2
Categories: Discrete Semiconductor Products
Manufacturer Package: TO-220AB
Channel Type Type: N
Drain Source Voltage: 1000V
Gate Charge (Qg) (Maximum) @ Vgs: 37.5nC @ 5V
Input Capacitance (Ciss) (Maximum) @ Vds: 1020pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 125W (Tc)
Rds On (Maximum) @ Id, Vgs: 5.5 Ohm @ 1.5A, 0V
Introduction Date: April 14, 2017
ECCN: EAR99
Estimated EOL Date: 2033
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Limited
N-Channel 1000V 3A (Tc) 125W (Tc) Through Hole TO-220-3
MOSFET N-CH 1000V 3A TO220AB
MOSFET N-CH MOSFETS (D2) 1000V 3A
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 777661-IXTP3N100D2 | 238-IXTP3N100D2-ND | IXTP3N100D2 | IXTP3N100D2 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP3N100D2 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| MOSFET Operating Mode | Depletion | |||
| PD | 125000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) |
