Littelfuse, Inc. Single FETs, MOSFETs IXTP36N30P

Description
N-Channel 300V 36A (Tc) 300W (Tc) Through Hole TO-220-3
Request a Quote Datasheet
Description
N-Channel 300V 36A (Tc) 300W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 238-IXTP36N30P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXTP36N30P-ND
Single FETs, MOSFETs 238-IXTP36N30P-ND
N-Channel 300V 36A (Tc) 300W (Tc) Through Hole TO-220-3

N-Channel 300V 36A (Tc) 300W (Tc) Through Hole TO-220-3

Buy Now Datasheet
FETs - Single - IXTP36N30P - 1191283-IXTP36N30P - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IXTP36N30P
1191283-IXTP36N30P
FETs - Single - IXTP36N30P 1191283-IXTP36N30P
Manufacturer: IXYS Win Source Part Number: 1191283-IXTP36N30P Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 300W Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 300V Id - Continuous Drain Current: 36A Rds On (Maximum) at Id, Vgs: 110mOhm at 18A, 10V Gate Source Voltage(th) (Maximum) at Id: 5.5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 70nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 2250pF at 25V

Manufacturer: IXYS
Win Source Part Number: 1191283-IXTP36N30P
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 300W
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 300V
Id - Continuous Drain Current: 36A
Rds On (Maximum) at Id, Vgs: 110mOhm at 18A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 70nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 2250pF at 25V

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Sheung Wan, Hong Kong
MOSFET 36 Amps 300V 0.11 Rds

MOSFET 36 Amps 300V 0.11 Rds

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTP36N30P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTP36N30P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTP36N30P
MOSFET N-CH 300V 36A TO220AB

MOSFET N-CH 300V 36A TO220AB

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 238-IXTP36N30P-ND 1191283-IXTP36N30P IXTP36N30P IXTP36N30P
Product Name Single FETs, MOSFETs FETs - Single - IXTP36N30P MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3 TO-220; TO-220-3
V(BR)DSS 300 volts
QG 70 nC
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