Zilog Single FETs, MOSFETs IXTP160N10T

Description
N-Channel 100V 160A (Tc) 430W (Tc) Through Hole TO-220-3
Request a Quote Datasheet
Description
N-Channel 100V 160A (Tc) 430W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single FETs, MOSFETs - IXTP160N10T-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTP160N10T-ND
Single FETs, MOSFETs IXTP160N10T-ND
N-Channel 100V 160A (Tc) 430W (Tc) Through Hole TO-220-3

N-Channel 100V 160A (Tc) 430W (Tc) Through Hole TO-220-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP160N10T - 1191279-IXTP160N10T - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP160N10T
1191279-IXTP160N10T
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP160N10T 1191279-IXTP160N10T
Manufacturer: IXYS Win Source Part Number: 1191279-IXTP160N10T Series: TrenchMV Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-220-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Family Name: IXTP160N10T Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-220AB Channel Type Type: N Drain Source Voltage: 100V Vgs(th) (Maximum) @ Id: 4.5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 132nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 6600pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 430W (Tc) Rds On (Maximum) @ Id, Vgs: 7 mOhm @ 25A, 10V Alternative Parts (Cross-Reference): IRFB4310; AP92LT10GP-HF; AOT2918L; Introduction Date: December 20, 2006 ECCN: EAR99 Country of Origin: United States of America Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Limited Quantity per package: 50

Manufacturer: IXYS
Win Source Part Number: 1191279-IXTP160N10T
Series: TrenchMV
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-220-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Family Name: IXTP160N10T
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-220AB
Channel Type Type: N
Drain Source Voltage: 100V
Vgs(th) (Maximum) @ Id: 4.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 132nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 6600pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 430W (Tc)
Rds On (Maximum) @ Id, Vgs: 7 mOhm @ 25A, 10V
Alternative Parts (Cross-Reference): IRFB4310; AP92LT10GP-HF; AOT2918L;
Introduction Date: December 20, 2006
ECCN: EAR99
Country of Origin: United States of America
Estimated EOL Date: 2024
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Limited
Quantity per package: 50

Buy Now Datasheet
Single FETs, MOSFETs - IXTP160N10T - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXTP160N10T
Single FETs, MOSFETs IXTP160N10T
MOSFET N-CH 100V 160A TO220AB

MOSFET N-CH 100V 160A TO220AB

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTP160N10T - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTP160N10T
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTP160N10T
MOSFET N-CH 100V 160A TO220AB

MOSFET N-CH 100V 160A TO220AB

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 160 Amps 100V 6.9 Rds

MOSFET 160 Amps 100V 6.9 Rds

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Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTP160N10T-ND 1191279-IXTP160N10T IXTP160N10T IXTP160N10T IXTP160N10T
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP160N10T Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3 TO-220; TO-220-3 TO-220; TO-220-3
QG 132 nC
PD 430000 milliwatts 430000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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