Manufacturer: IXYS
Win Source Part Number: 1191277-IXTP14N60P
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 300W
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 600V
Id - Continuous Drain Current: 14A
Rds On (Maximum) at Id, Vgs: 550mOhm at 7A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 36nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 2500pF at 25V
N-Channel 600V 14A (Tc) 300W (Tc) Through Hole TO-220-3
MOSFET N-CH 600V 14A TO220AB
MOSFET 14.0 Amps 600 V 0.55 Ohm Rds
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Power MOSFET | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1191277-IXTP14N60P | IXTP14N60P-ND | IXTP14N60P | IXTP14N60P |
| Product Name | FETs - Single - IXTP14N60P | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 600 volts | |||
| QG | 36 nC | |||
| PD | 300000 milliwatts |
