MOSFET N-CH 100V 130A TO220AB
N-Channel 100V 130A (Tc) 360W (Tc) Through Hole TO-220-3
Manufacturer: IXYS
Win Source Part Number: 1191276-IXTP130N10T
Series: TrenchMV
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-220-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Family Name: IXTP130N10T
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-220AB
Channel Type Type: N
Drain Source Voltage: 100V
Vgs(th) (Maximum) @ Id: 4.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 104nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 5080pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 360W (Tc)
Rds On (Maximum) @ Id, Vgs: 9.1 mOhm @ 25A, 10V
Alternative Parts (Cross-Reference): IPP08CN10N GXK; IPP08CN10N; BUK7510-100B,127;
Introduction Date: December 14, 2006
ECCN: EAR99
Estimated EOL Date: 2024
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance
MOSFET N-CH 100V 130A TO220AB
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Power MOSFET | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXTP130N10T | IXTP130N10T-ND | 1191276-IXTP130N10T | IXTP130N10T | IXTP130N10T |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP130N10T | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 100 volts | ||||
| IDSS | 130000 milliamps | ||||
| PD | 360000 milliwatts | 360000 milliwatts |
