Zilog FETs - Single - IXTP120P065T IXTP120P065T

Description
Manufacturer: IXYS Win Source Part Number: 1191275-IXTP120P065T Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 298W Alternative Parts (Cross-Reference): SUP90P06-09L-E3; Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 65V Id - Continuous Drain Current: 120A Rds On (Maximum) at Id, Vgs: 10mOhm at 500mA, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 185nC at 10V Gate Source Voltage (Maximum): ±15V Input Capacitance (Ciss) (Maximum) at Vds: 13200pF at 25V
  • FETs - Single - IXTP120P065T - 1191275-IXTP120P065T - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IXTP120P065T-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTP120P065T - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Transistor - 219806062 - Radwell International
    Radwell International
  • Single FETs, MOSFETs - IXTP120P065T - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • MOSFET P-CH 65V 120A TO-220 - 401-IXTP120P065T - Utmel Electronic Limited
    Utmel Electronic Limited
Request a Quote Datasheet
Description
Manufacturer: IXYS Win Source Part Number: 1191275-IXTP120P065T Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 298W Alternative Parts (Cross-Reference): SUP90P06-09L-E3; Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 65V Id - Continuous Drain Current: 120A Rds On (Maximum) at Id, Vgs: 10mOhm at 500mA, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 185nC at 10V Gate Source Voltage (Maximum): ±15V Input Capacitance (Ciss) (Maximum) at Vds: 13200pF at 25V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FETs - Single - IXTP120P065T - 1191275-IXTP120P065T - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IXTP120P065T
1191275-IXTP120P065T
FETs - Single - IXTP120P065T 1191275-IXTP120P065T
Manufacturer: IXYS Win Source Part Number: 1191275-IXTP120P065T Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 298W Alternative Parts (Cross-Reference): SUP90P06-09L-E3; Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 65V Id - Continuous Drain Current: 120A Rds On (Maximum) at Id, Vgs: 10mOhm at 500mA, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 185nC at 10V Gate Source Voltage (Maximum): ±15V Input Capacitance (Ciss) (Maximum) at Vds: 13200pF at 25V

Manufacturer: IXYS
Win Source Part Number: 1191275-IXTP120P065T
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: P-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 298W
Alternative Parts (Cross-Reference): SUP90P06-09L-E3;
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 65V
Id - Continuous Drain Current: 120A
Rds On (Maximum) at Id, Vgs: 10mOhm at 500mA, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 185nC at 10V
Gate Source Voltage (Maximum): ±15V
Input Capacitance (Ciss) (Maximum) at Vds: 13200pF at 25V

Buy Now
Single FETs, MOSFETs - IXTP120P065T-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTP120P065T-ND
Single FETs, MOSFETs IXTP120P065T-ND
P-Channel 65V 120A (Tc) 298W (Tc) Through Hole TO-220-3

P-Channel 65V 120A (Tc) 298W (Tc) Through Hole TO-220-3

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IXTP120P065T
MOSFET IXTP120P065T
MOSFET -120 Amps -65V 0.01 Rds

MOSFET -120 Amps -65V 0.01 Rds

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTP120P065T - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTP120P065T
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTP120P065T
MOSFET P-CH 65V 120A TO220AB

MOSFET P-CH 65V 120A TO220AB

Supplier's Site
Transistor - 219806062 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
219806062
Transistor 219806062
TRANSISTOR, MOSFET, 1X CHANNEL, 65 VDS, 120 A, 10 MOHMS, 298 W, THROUGH HOLE MOUNTING, TO-220-3 PACKAGE. FREE 2 YEAR RADWELL WARRANTY

TRANSISTOR, MOSFET, 1X CHANNEL, 65 VDS, 120 A, 10 MOHMS, 298 W, THROUGH HOLE MOUNTING, TO-220-3 PACKAGE. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Single FETs, MOSFETs - IXTP120P065T - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXTP120P065T
Single FETs, MOSFETs IXTP120P065T
MOSFET P-CH 65V 120A TO220AB

MOSFET P-CH 65V 120A TO220AB

Supplier's Site Datasheet
MOSFET P-CH 65V 120A TO-220 - 401-IXTP120P065T - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET P-CH 65V 120A TO-220
401-IXTP120P065T
MOSFET P-CH 65V 120A TO-220 401-IXTP120P065T
MOSFET P-CH 65V 120A TO-220

MOSFET P-CH 65V 120A TO-220

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Radwell International ODG (Origin Data Global) Utmel Electronic Limited
Product Category Power MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1191275-IXTP120P065T IXTP120P065T-ND IXTP120P065T IXTP120P065T 219806062 IXTP120P065T 401-IXTP120P065T
Product Name FETs - Single - IXTP120P065T Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Transistor Single FETs, MOSFETs MOSFET P-CH 65V 120A TO-220
Polarity P-Channel; P-Channel P-Channel P-Channel; P-Channel
Operating Mode Enhancement
V(BR)DSS 65 volts 65 volts -65 volts
QG 185 nC
PD 298000 milliwatts 298000 milliwatts 298000 milliwatts
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