Zilog Single FETs, MOSFETs IXTP10P50P

Description
P-Channel 500V 10A (Tc) 300W (Tc) Through Hole TO-220-3
Request a Quote Datasheet
Description
P-Channel 500V 10A (Tc) 300W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 238-IXTP10P50P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXTP10P50P-ND
Single FETs, MOSFETs 238-IXTP10P50P-ND
P-Channel 500V 10A (Tc) 300W (Tc) Through Hole TO-220-3

P-Channel 500V 10A (Tc) 300W (Tc) Through Hole TO-220-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP10P50P - 1191274-IXTP10P50P - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP10P50P
1191274-IXTP10P50P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP10P50P 1191274-IXTP10P50P
Manufacturer: IXYS Win Source Part Number: 1191274-IXTP10P50P Series: PolarP Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-220-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Family Name: IXTP10P50P Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-220AB Channel Type Type: P Drain Source Voltage: 500V Vgs(th) (Maximum) @ Id: 4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 2840pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 300W (Tc) Rds On (Maximum) @ Id, Vgs: 1 Ohm @ 5A, 10V Alternative Parts (Cross-Reference): MSAEX8P50A; Introduction Date: February 27, 2015 ECCN: EAR99 Country of Origin: United States of America Estimated EOL Date: 2028 Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited

Manufacturer: IXYS
Win Source Part Number: 1191274-IXTP10P50P
Series: PolarP
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-220-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Family Name: IXTP10P50P
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-220AB
Channel Type Type: P
Drain Source Voltage: 500V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 50nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 2840pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 300W (Tc)
Rds On (Maximum) @ Id, Vgs: 1 Ohm @ 5A, 10V
Alternative Parts (Cross-Reference): MSAEX8P50A;
Introduction Date: February 27, 2015
ECCN: EAR99
Country of Origin: United States of America
Estimated EOL Date: 2028
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - IXTP10P50P - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXTP10P50P
Single FETs, MOSFETs IXTP10P50P
MOSFET P-CH 500V 10A TO220AB

MOSFET P-CH 500V 10A TO220AB

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTP10P50P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTP10P50P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTP10P50P
MOSFET P-CH 500V 10A TO220AB

MOSFET P-CH 500V 10A TO220AB

Supplier's Site
Sheung Wan, Hong Kong
MOSFET -10.0 Amps -500V 1.000 Rds

MOSFET -10.0 Amps -500V 1.000 Rds

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 238-IXTP10P50P-ND 1191274-IXTP10P50P IXTP10P50P IXTP10P50P IXTP10P50P
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP10P50P Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity P-Channel P-Channel; P-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3 TO-220; TO-220-3 TO-220; TO-220-3
Operating Mode Enhancement
QG 50 nC
PD 300000 milliwatts 300000 milliwatts
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