MOSFET N-CH 1000V 400MA TO220AB
Manufacturer: IXYS
Win Source Part Number: 040916-IXTP01N100D
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
FET Feature: Depletion Mode
Polarity: N-Channel
Power Dissipation (Max): 1.1W (Ta), 25W (Tc)
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 1000V (1kV)
Continuous Drain Current at 25°C: 100mA (Tc)
Max Input Capacitance: 120pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 110 Ohm @ 50mA, 0V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Limited
N-Channel 1000V 100mA (Tc) 1.1W (Ta), 25W (Tc) Through Hole TO-220-3
MOSFET N-CH 1000V 400MA TO220AB
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXTP01N100D | 040916-IXTP01N100D | 238-IXTP01N100D-ND | IXTP01N100D | IXTP01N100D |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP01N100D | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 1000 volts | 1000 volts | |||
| IDSS | 400 milliamps | ||||
| PD | 1100 milliwatts | 1100 to 25000 milliwatts |
