Win Source Part Number: 1346660-IXTK550N055T
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Series: TrenchT2™
Package: Tube
Standard Package: 25
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 55 V
Power Dissipation (Max): 1250W (Tc)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264 (IXTK)
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 43 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Base Product Number: IXTK550
Drive Voltage (Max Rds On, Min Rds On): 10V
California Prop 65: Warning Information
Current - Continuous Drain (Id) @ 25°C: 550A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 595 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 40000 pF @ 25 V
N-Channel 55V 550A (Tc) 1250W (Tc) Through Hole TO-264 (IXTK)
MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
MOSFET N-CH 55V 550A TO264
| Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1346660-IXTK550N055T2 | IXTK550N055T2-ND | IXTK550N055T2 | IXTK550N055T2 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel |
