N-Channel 1200V 6A (Tc) 300W (Tc) Through Hole TO-247 (IXTH)
Manufacturer: IXYS
Win Source Part Number: 1191260-IXTH6N120
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-247-3
Power Dissipation (Maximum): 300W
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 30
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 1200V
Id - Continuous Drain Current: 6A
Rds On (Maximum) at Id, Vgs: 2.6Ohm at 3A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 56nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 1950pF at 25V
MOSFET N-CH 1200V 6A TO247
MOSFET N-CH 1200V 6A TO247
MOSFET N-CH 1200V 6A TO-247AD
| DigiKey | Win Source Electronics | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXTH6N120-ND | 1191260-IXTH6N120 | IXTH6N120 | IXTH6N120 | IXTH6N120 | 401-IXTH6N120 |
| Product Name | Single FETs, MOSFETs | FETs - Single - IXTH6N120 | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET N-CH 1200V 6A TO-247AD |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | |||
| Package Type | TO-247; TO-247-3 | TO-247; SOT3 | TO-247; TO-247-3 | TO-247; TO-247-3 | ||
| V(BR)DSS | 1200 volts | 1200 volts | 1200 volts | |||
| QG | 56 nC | |||||
| PD | 300000 milliwatts | 300000 milliwatts | 300000 milliwatts |
