Zilog FETs - Single - IXTH6N120 IXTH6N120

Description
Manufacturer: IXYS Win Source Part Number: 1191260-IXTH6N120 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-247 (IXTH) Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 300W Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 30 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 1200V Id - Continuous Drain Current: 6A Rds On (Maximum) at Id, Vgs: 2.6Ohm at 3A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 56nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 1950pF at 25V
  • FETs - Single - IXTH6N120 - 1191260-IXTH6N120 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IXTH6N120-ND - DigiKey
    DigiKey
  • MOSFET N-CH 1200V 6A TO-247AD - 401-IXTH6N120 - Utmel Electronic Limited
    Utmel Electronic Limited
  • Single FETs, MOSFETs - IXTH6N120 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTH6N120 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: IXYS Win Source Part Number: 1191260-IXTH6N120 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-247 (IXTH) Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 300W Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 30 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 1200V Id - Continuous Drain Current: 6A Rds On (Maximum) at Id, Vgs: 2.6Ohm at 3A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 56nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 1950pF at 25V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FETs - Single - IXTH6N120 - 1191260-IXTH6N120 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IXTH6N120
1191260-IXTH6N120
FETs - Single - IXTH6N120 1191260-IXTH6N120
Manufacturer: IXYS Win Source Part Number: 1191260-IXTH6N120 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-247 (IXTH) Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 300W Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 30 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 1200V Id - Continuous Drain Current: 6A Rds On (Maximum) at Id, Vgs: 2.6Ohm at 3A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 56nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 1950pF at 25V

Manufacturer: IXYS
Win Source Part Number: 1191260-IXTH6N120
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-247-3
Power Dissipation (Maximum): 300W
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 30
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 1200V
Id - Continuous Drain Current: 6A
Rds On (Maximum) at Id, Vgs: 2.6Ohm at 3A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 56nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 1950pF at 25V

Buy Now
Single FETs, MOSFETs - IXTH6N120-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTH6N120-ND
Single FETs, MOSFETs IXTH6N120-ND
N-Channel 1200V 6A (Tc) 300W (Tc) Through Hole TO-247 (IXTH)

N-Channel 1200V 6A (Tc) 300W (Tc) Through Hole TO-247 (IXTH)

Buy Now Datasheet
MOSFET N-CH 1200V 6A TO-247AD - 401-IXTH6N120 - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 1200V 6A TO-247AD
401-IXTH6N120
MOSFET N-CH 1200V 6A TO-247AD 401-IXTH6N120
MOSFET N-CH 1200V 6A TO-247AD

MOSFET N-CH 1200V 6A TO-247AD

Supplier's Site
Single FETs, MOSFETs - IXTH6N120 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXTH6N120
Single FETs, MOSFETs IXTH6N120
MOSFET N-CH 1200V 6A TO247

MOSFET N-CH 1200V 6A TO247

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IXTH6N120
MOSFET IXTH6N120
MOSFET 6 Amps 1200V 2.700 Rds

MOSFET 6 Amps 1200V 2.700 Rds

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTH6N120 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTH6N120
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTH6N120
MOSFET N-CH 1200V 6A TO247

MOSFET N-CH 1200V 6A TO247

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Utmel Electronic Limited ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1191260-IXTH6N120 IXTH6N120-ND 401-IXTH6N120 IXTH6N120 IXTH6N120 IXTH6N120
Product Name FETs - Single - IXTH6N120 Single FETs, MOSFETs MOSFET N-CH 1200V 6A TO-247AD Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 1200 volts 1200 volts 1200 volts
QG 56 nC
PD 300000 milliwatts 300000 milliwatts 300000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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