MOSFET N-CH 200V 60A TO247
N-Channel 200V 60A (Tc) 540W (Tc) Through Hole TO-247 (IXTH)
Manufacturer: IXYS
Win Source Part Number: 1049822-IXTH60N20L2
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 540W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247 (IXTH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 60A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 255nC @ 10V
Max Input Capacitance: 10500pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 45 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Sufficient
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MOSFET N-CH 200V 60A TO247
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IXTH60N20L2 | 238-IXTH60N20L2-ND | 1049822-IXTH60N20L2 | 401-IXTH60N20L2 | IXTH60N20L2 | IXTH60N20L2 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH60N20L2 | MOSFET N-CH 200V 60A TO-247 | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | ||||
| V(BR)DSS | 200 volts | 200 volts | 200 volts | |||
| IDSS | 60000 milliamps | |||||
| PD | 540000 milliwatts | 540000 milliwatts | 540000 milliwatts |
