Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH60N20L2 IXTH60N20L2

Description
Manufacturer: IXYS Win Source Part Number: 1049822-IXTH60N20L2 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 540W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 (IXTH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 60A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 255nC @ 10V Max Input Capacitance: 10500pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 45 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Sufficient
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH60N20L2 - 1049822-IXTH60N20L2 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IXTH60N20L2 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - 238-IXTH60N20L2-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTH60N20L2 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • MOSFET N-CH 200V 60A TO-247 - 401-IXTH60N20L2 - Utmel Electronic Limited
    Utmel Electronic Limited
Request a Quote Datasheet
Description
Manufacturer: IXYS Win Source Part Number: 1049822-IXTH60N20L2 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 540W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 (IXTH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 60A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 255nC @ 10V Max Input Capacitance: 10500pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 45 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH60N20L2 - 1049822-IXTH60N20L2 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH60N20L2
1049822-IXTH60N20L2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH60N20L2 1049822-IXTH60N20L2
Manufacturer: IXYS Win Source Part Number: 1049822-IXTH60N20L2 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 540W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 (IXTH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 60A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 255nC @ 10V Max Input Capacitance: 10500pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 45 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Sufficient

Manufacturer: IXYS
Win Source Part Number: 1049822-IXTH60N20L2
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 540W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247 (IXTH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 60A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 255nC @ 10V
Max Input Capacitance: 10500pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 45 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - IXTH60N20L2 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXTH60N20L2
Single FETs, MOSFETs IXTH60N20L2
MOSFET N-CH 200V 60A TO247

MOSFET N-CH 200V 60A TO247

Supplier's Site Datasheet
Single FETs, MOSFETs - 238-IXTH60N20L2-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXTH60N20L2-ND
Single FETs, MOSFETs 238-IXTH60N20L2-ND
N-Channel 200V 60A (Tc) 540W (Tc) Through Hole TO-247 (IXTH)

N-Channel 200V 60A (Tc) 540W (Tc) Through Hole TO-247 (IXTH)

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IXTH60N20L2
MOSFET IXTH60N20L2
MOSFET LINEAR L2 SERIES MOSFET 200V 60A

MOSFET LINEAR L2 SERIES MOSFET 200V 60A

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTH60N20L2 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTH60N20L2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTH60N20L2
MOSFET N-CH 200V 60A TO247

MOSFET N-CH 200V 60A TO247

Supplier's Site
MOSFET N-CH 200V 60A TO-247 - 401-IXTH60N20L2 - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 200V 60A TO-247
401-IXTH60N20L2
MOSFET N-CH 200V 60A TO-247 401-IXTH60N20L2
MOSFET N-CH 200V 60A TO-247

MOSFET N-CH 200V 60A TO-247

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1049822-IXTH60N20L2 IXTH60N20L2 238-IXTH60N20L2-ND IXTH60N20L2 IXTH60N20L2 401-IXTH60N20L2
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH60N20L2 Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N-CH 200V 60A TO-247
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 200 volts 200 volts 200 volts
PD 540000 milliwatts 540000 milliwatts 540000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-247; SOT3; TO-247 (IXTH) TO-247; TO-247-3 TO-247; TO-247-3 TO-247; TO-247-3
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