Zilog FETs - Single - IXTH50P10 IXTH50P10

Description
Manufacturer: IXYS Win Source Part Number: 1191259-IXTH50P10 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-247 (IXTH) Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 300W Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 30 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 50A Rds On (Maximum) at Id, Vgs: 55mOhm at 25A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 140nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 4350pF at 25V
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Description
Manufacturer: IXYS Win Source Part Number: 1191259-IXTH50P10 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-247 (IXTH) Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 300W Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 30 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 50A Rds On (Maximum) at Id, Vgs: 55mOhm at 25A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 140nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 4350pF at 25V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - IXTH50P10 - 1191259-IXTH50P10 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IXTH50P10
1191259-IXTH50P10
FETs - Single - IXTH50P10 1191259-IXTH50P10
Manufacturer: IXYS Win Source Part Number: 1191259-IXTH50P10 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-247 (IXTH) Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 300W Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 30 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 50A Rds On (Maximum) at Id, Vgs: 55mOhm at 25A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 140nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 4350pF at 25V

Manufacturer: IXYS
Win Source Part Number: 1191259-IXTH50P10
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: P-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-247-3
Power Dissipation (Maximum): 300W
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 30
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 100V
Id - Continuous Drain Current: 50A
Rds On (Maximum) at Id, Vgs: 55mOhm at 25A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 140nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 4350pF at 25V

Buy Now
Single FETs, MOSFETs - 238-IXTH50P10-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXTH50P10-ND
Single FETs, MOSFETs 238-IXTH50P10-ND
P-Channel 100V 50A (Tc) 300W (Tc) Through Hole TO-247 (IXTH)

P-Channel 100V 50A (Tc) 300W (Tc) Through Hole TO-247 (IXTH)

Buy Now Datasheet
Single FETs, MOSFETs - IXTH50P10 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXTH50P10
Single FETs, MOSFETs IXTH50P10
MOSFET P-CH 100V 50A TO247

MOSFET P-CH 100V 50A TO247

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTH50P10 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTH50P10
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTH50P10
MOSFET P-CH 100V 50A TO247

MOSFET P-CH 100V 50A TO247

Supplier's Site
Sheung Wan, Hong Kong
MOSFET -50 Amps -100V 0.055 Rds

MOSFET -50 Amps -100V 0.055 Rds

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Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Power MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1191259-IXTH50P10 238-IXTH50P10-ND IXTH50P10 IXTH50P10 IXTH50P10
Product Name FETs - Single - IXTH50P10 Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity P-Channel; P-Channel P-Channel P-Channel; P-Channel
V(BR)DSS 100 volts 100 volts
QG 140 nC
PD 300000 milliwatts 300000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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