Zilog Single FETs, MOSFETs IXTH50P085

Description
P-Channel 85V 50A (Tc) 300W (Tc) Through Hole TO-247 (IXTH)
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Description
P-Channel 85V 50A (Tc) 300W (Tc) Through Hole TO-247 (IXTH)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IXTH50P085-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTH50P085-ND
Single FETs, MOSFETs IXTH50P085-ND
P-Channel 85V 50A (Tc) 300W (Tc) Through Hole TO-247 (IXTH)

P-Channel 85V 50A (Tc) 300W (Tc) Through Hole TO-247 (IXTH)

Buy Now Datasheet
FETs - Single - IXTH50P085 - 1191258-IXTH50P085 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IXTH50P085
1191258-IXTH50P085
FETs - Single - IXTH50P085 1191258-IXTH50P085
Manufacturer: IXYS Win Source Part Number: 1191258-IXTH50P085 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-247 (IXTH) Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 300W Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 30 MSL Level: Not Applicable Vds - Drain-Source Breakdown Voltage: 85V Id - Continuous Drain Current: 50A Rds On (Maximum) at Id, Vgs: 55mOhm at 25A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 150nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 4200pF at 25V

Manufacturer: IXYS
Win Source Part Number: 1191258-IXTH50P085
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: P-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-247-3
Power Dissipation (Maximum): 300W
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 30
MSL Level: Not Applicable
Vds - Drain-Source Breakdown Voltage: 85V
Id - Continuous Drain Current: 50A
Rds On (Maximum) at Id, Vgs: 55mOhm at 25A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 150nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 4200pF at 25V

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTH50P085 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTH50P085
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTH50P085
MOSFET P-CH 85V 50A TO247

MOSFET P-CH 85V 50A TO247

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Power MOSFET RF Transistors
Product Number IXTH50P085-ND 1191258-IXTH50P085 IXTH50P085
Product Name Single FETs, MOSFETs FETs - Single - IXTH50P085 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel
Package Type TO-247; TO-247-3 TO-247; SOT3 TO-247; TO-247-3
V(BR)DSS 85 volts
QG 150 nC
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