Zilog Single FETs, MOSFETs IXTH3N100P

Description
N-Channel 1000V 3A (Tc) 125W (Tc) Through Hole TO-247 (IXTH)
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Description
N-Channel 1000V 3A (Tc) 125W (Tc) Through Hole TO-247 (IXTH)
Request a Quote Datasheet

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Product
Description
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Single FETs, MOSFETs - IXTH3N100P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTH3N100P-ND
Single FETs, MOSFETs IXTH3N100P-ND
N-Channel 1000V 3A (Tc) 125W (Tc) Through Hole TO-247 (IXTH)

N-Channel 1000V 3A (Tc) 125W (Tc) Through Hole TO-247 (IXTH)

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH3N100P - 1049802-IXTH3N100P - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH3N100P
1049802-IXTH3N100P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH3N100P 1049802-IXTH3N100P
Manufacturer: IXYS Win Source Part Number: 1049802-IXTH3N100P Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 (IXTH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 1000V Continuous Drain Current at 25°C: 3A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 39nC @ 10V Max Input Capacitance: 1100pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.8 Ohm @ 1.5A, 10V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Sufficient Quantity per package: 30

Manufacturer: IXYS
Win Source Part Number: 1049802-IXTH3N100P
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247 (IXTH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 1000V
Continuous Drain Current at 25°C: 3A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 39nC @ 10V
Max Input Capacitance: 1100pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.8 Ohm @ 1.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Sufficient
Quantity per package: 30

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Sheung Wan, Hong Kong
MOSFET 3 Amps 1000V

MOSFET 3 Amps 1000V

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTH3N100P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTH3N100P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTH3N100P
MOSFET N-CH 1000V 3A TO247

MOSFET N-CH 1000V 3A TO247

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IXTH3N100P-ND 1049802-IXTH3N100P IXTH3N100P IXTH3N100P
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH3N100P MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-247; TO-247-3 TO-247; SOT3; TO-247 (IXTH) TO-247; TO-247-3
V(BR)DSS 1000 volts
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