Littelfuse, Inc. Single FETs, MOSFETs IXTH36N50P

Description
N-Channel 500V 36A (Tc) 540W (Tc) Through Hole TO-247 (IXTH)
  • Single FETs, MOSFETs - IXTH36N50P-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH36N50P - 1191254-IXTH36N50P - Win Source Electronics
    Win Source Electronics
  • IXYS SEMICONDUCTOR IXTH36N50P MOSFET Transistor, PolarFET, N Channel, 36 A, 500 V, 170 mohm, 10 V, 5 V - 401-IXTH36N50P - Utmel Electronic Limited
    Utmel Electronic Limited
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTH36N50P - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
N-Channel 500V 36A (Tc) 540W (Tc) Through Hole TO-247 (IXTH)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IXTH36N50P-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTH36N50P-ND
Single FETs, MOSFETs IXTH36N50P-ND
N-Channel 500V 36A (Tc) 540W (Tc) Through Hole TO-247 (IXTH)

N-Channel 500V 36A (Tc) 540W (Tc) Through Hole TO-247 (IXTH)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH36N50P - 1191254-IXTH36N50P - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH36N50P
1191254-IXTH36N50P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH36N50P 1191254-IXTH36N50P
Manufacturer: IXYS Win Source Part Number: 1191254-IXTH36N50P Series: PolarHV Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Family Name: IXTH36N50P Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.ixys.com RoHS State: Request Verification Manufacturer Package: TO-247 (IXTH) Channel Type Type: N Drain Source Voltage: 500V Vgs(th) (Maximum) @ Id: 5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 85nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 5500pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 540W (Tc) Rds On (Maximum) @ Id, Vgs: 170 mOhm @ 500mA, 10V Alternative Parts (Cross-Reference): STW20NM50FD; STW20NK50Z; STW19NM50N; Introduction Date: October 11, 2004 ECCN: EAR99 Country of Origin: United States of America Estimated EOL Date: 2024 Halogen Free: Unknown Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Limited

Manufacturer: IXYS
Win Source Part Number: 1191254-IXTH36N50P
Series: PolarHV
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-247-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Family Name: IXTH36N50P
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.ixys.com
RoHS State: Request Verification
Manufacturer Package: TO-247 (IXTH)
Channel Type Type: N
Drain Source Voltage: 500V
Vgs(th) (Maximum) @ Id: 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 85nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 5500pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 540W (Tc)
Rds On (Maximum) @ Id, Vgs: 170 mOhm @ 500mA, 10V
Alternative Parts (Cross-Reference): STW20NM50FD; STW20NK50Z; STW19NM50N;
Introduction Date: October 11, 2004
ECCN: EAR99
Country of Origin: United States of America
Estimated EOL Date: 2024
Halogen Free: Unknown
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
IXYS SEMICONDUCTOR IXTH36N50P MOSFET Transistor, PolarFET, N Channel, 36 A, 500 V, 170 mohm, 10 V, 5 V - 401-IXTH36N50P - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
IXYS SEMICONDUCTOR IXTH36N50P MOSFET Transistor, PolarFET, N Channel, 36 A, 500 V, 170 mohm, 10 V, 5 V
401-IXTH36N50P
IXYS SEMICONDUCTOR IXTH36N50P MOSFET Transistor, PolarFET, N Channel, 36 A, 500 V, 170 mohm, 10 V, 5 V 401-IXTH36N50P
IXYS SEMICONDUCTOR IXTH36N50P MOSFET Transistor, PolarFET, N Channel, 36 A, 500 V, 170 mohm, 10 V, 5 V

IXYS SEMICONDUCTOR IXTH36N50P MOSFET Transistor, PolarFET, N Channel, 36 A, 500 V, 170 mohm, 10 V, 5 V

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTH36N50P - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTH36N50P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTH36N50P
MOSFET N-CH 500V 36A TO247

MOSFET N-CH 500V 36A TO247

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IXTH36N50P
MOSFET IXTH36N50P
MOSFET 36.0 Amps 500 V 0.17 Ohm Rds

MOSFET 36.0 Amps 500 V 0.17 Ohm Rds

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTH36N50P-ND 1191254-IXTH36N50P 401-IXTH36N50P IXTH36N50P IXTH36N50P
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH36N50P IXYS SEMICONDUCTOR IXTH36N50P MOSFET Transistor, PolarFET, N Channel, 36 A, 500 V, 170 mohm, 10 V, 5 V Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel
Package Type TO-247; TO-247-3 TO-247; SOT3 Through Hole
QG 85 nC
PD 540000 milliwatts 540000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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