Manufacturer: IXYS
Win Source Part Number: 1049793-IXTH2R4N120P
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247 (IXTH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 1200V
Continuous Drain Current at 25°C: 2.4A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 37nC @ 10V
Max Input Capacitance: 1207pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7.5 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Sufficient
Quantity per package: 30
N-Channel 1200V 2.4A (Tc) 125W (Tc) Through Hole TO-247 (IXTH)
MOSFET N-CH 1200V 2.4A TO247
| Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1049793-IXTH2R4N120P | IXTH2R4N120P-ND | IXTH2R4N120P | IXTH2R4N120P |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH2R4N120P | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 1200 volts | |||
| PD | 125000 milliwatts |
