Zilog Single FETs, MOSFETs IXTH260N055T2

Description
N-Channel 55V 260A (Tc) 480W (Tc) Through Hole TO-247 (IXTH)
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Description
N-Channel 55V 260A (Tc) 480W (Tc) Through Hole TO-247 (IXTH)
Request a Quote Datasheet

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Product
Description
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Single FETs, MOSFETs - IXTH260N055T2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTH260N055T2-ND
Single FETs, MOSFETs IXTH260N055T2-ND
N-Channel 55V 260A (Tc) 480W (Tc) Through Hole TO-247 (IXTH)

N-Channel 55V 260A (Tc) 480W (Tc) Through Hole TO-247 (IXTH)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH260N055T2 - 1049790-IXTH260N055T2 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH260N055T2
1049790-IXTH260N055T2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH260N055T2 1049790-IXTH260N055T2
Manufacturer: IXYS Win Source Part Number: 1049790-IXTH260N055T 2 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 480W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-247 (IXTH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 260A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 140nC @ 10V Max Input Capacitance: 10800pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.3 mOhm @ 50A, 10V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Sufficient

Manufacturer: IXYS
Win Source Part Number: 1049790-IXTH260N055T2
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 480W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-247 (IXTH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 260A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 140nC @ 10V
Max Input Capacitance: 10800pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.3 mOhm @ 50A, 10V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTH260N055T2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTH260N055T2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTH260N055T2
MOSFET N-CH 55V 260A TO247

MOSFET N-CH 55V 260A TO247

Supplier's Site
Sheung Wan, Hong Kong
MOSFET TRENCHT2 PWR MOSFET 55V 260A

MOSFET TRENCHT2 PWR MOSFET 55V 260A

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTH260N055T2-ND 1049790-IXTH260N055T2 IXTH260N055T2 IXTH260N055T2
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH260N055T2 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel
Package Type TO-247; TO-247-3 TO-247; SOT3; TO-247 (IXTH) TO-247; TO-247-3
V(BR)DSS 55 volts
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