Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH260N055T2 IXTH260N055T2

Description
Manufacturer: IXYS Win Source Part Number: 1049790-IXTH260N055T 2 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 480W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-247 (IXTH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 260A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 140nC @ 10V Max Input Capacitance: 10800pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.3 mOhm @ 50A, 10V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Sufficient
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH260N055T2 - 1049790-IXTH260N055T2 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IXTH260N055T2-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTH260N055T2 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: IXYS Win Source Part Number: 1049790-IXTH260N055T 2 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 480W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-247 (IXTH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 260A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 140nC @ 10V Max Input Capacitance: 10800pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.3 mOhm @ 50A, 10V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

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Product
Description
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH260N055T2 - 1049790-IXTH260N055T2 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH260N055T2
1049790-IXTH260N055T2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH260N055T2 1049790-IXTH260N055T2
Manufacturer: IXYS Win Source Part Number: 1049790-IXTH260N055T 2 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 480W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-247 (IXTH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 260A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 140nC @ 10V Max Input Capacitance: 10800pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.3 mOhm @ 50A, 10V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Sufficient

Manufacturer: IXYS
Win Source Part Number: 1049790-IXTH260N055T2
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 480W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-247 (IXTH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 260A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 140nC @ 10V
Max Input Capacitance: 10800pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.3 mOhm @ 50A, 10V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - IXTH260N055T2-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTH260N055T2-ND
Single FETs, MOSFETs IXTH260N055T2-ND
N-Channel 55V 260A (Tc) 480W (Tc) Through Hole TO-247 (IXTH)

N-Channel 55V 260A (Tc) 480W (Tc) Through Hole TO-247 (IXTH)

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IXTH260N055T2
MOSFET IXTH260N055T2
MOSFET TRENCHT2 PWR MOSFET 55V 260A

MOSFET TRENCHT2 PWR MOSFET 55V 260A

Buy Now
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTH260N055T2 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTH260N055T2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTH260N055T2
MOSFET N-CH 55V 260A TO247

MOSFET N-CH 55V 260A TO247

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1049790-IXTH260N055T2 IXTH260N055T2-ND IXTH260N055T2 IXTH260N055T2
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH260N055T2 Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 55 volts
PD 480000 milliwatts
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