Zilog Single FETs, MOSFETs IXTH1R4N250P3

The IXTH1R4N250P3 is an N-channel enhancement mode MOSFET with a 2500 V drain-source blocking voltage and a continuous drain current of 1.4 A at 25°C, designed for high-voltage power supplies, capacitor discharge, and pulse circuits. It is packaged in a TO-247 case with a weight of 6 g and a mounting torque of 1.13 Nm. The device features a fast intrinsic diode, low package inductance, and a maximum junction temperature of 150°C. The on-state resistance is 28 Ω at 10 V gate-source voltage and 0.7 A drain current. Thermal resistance from junction to case is 0.64 °C/W. The part meets RoHS compliance and is rated for operation from -55°C to +150°C junction temperature.