Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH14N100 IXTH14N100

Description
Manufacturer: IXYS Win Source Part Number: 1049763-IXTH14N100 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 360W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 (IXTH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 1000V Continuous Drain Current at 25°C: 14A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 195nC @ 10V Max Input Capacitance: 5650pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 820 mOhm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Sufficient Quantity per package: 30
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Description
Manufacturer: IXYS Win Source Part Number: 1049763-IXTH14N100 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 360W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 (IXTH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 1000V Continuous Drain Current at 25°C: 14A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 195nC @ 10V Max Input Capacitance: 5650pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 820 mOhm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Sufficient Quantity per package: 30
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH14N100 - 1049763-IXTH14N100 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH14N100
1049763-IXTH14N100
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH14N100 1049763-IXTH14N100
Manufacturer: IXYS Win Source Part Number: 1049763-IXTH14N100 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 360W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 (IXTH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 1000V Continuous Drain Current at 25°C: 14A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 195nC @ 10V Max Input Capacitance: 5650pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 820 mOhm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Sufficient Quantity per package: 30

Manufacturer: IXYS
Win Source Part Number: 1049763-IXTH14N100
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 360W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247 (IXTH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 1000V
Continuous Drain Current at 25°C: 14A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 195nC @ 10V
Max Input Capacitance: 5650pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 820 mOhm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Sufficient
Quantity per package: 30

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Sheung Wan, Hong Kong
MOSFET 14 Amps 1000V 0.82 Rds

MOSFET 14 Amps 1000V 0.82 Rds

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTH14N100 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTH14N100
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTH14N100
MOSFET N-CH 1000V 14A TO247

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Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1049763-IXTH14N100 IXTH14N100 IXTH14N100
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH14N100 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 1000 volts
PD 360000 milliwatts
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