IXYS Integrated Circuits Division Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs IXTF2N300P3

Description
Win Source Part Number: 1346824-IXTF2N300P3 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: Polar P3™ Package: Tube Standard Package: 25 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 3000 V Power Dissipation (Max): 160W (Tc) Mounting Type: Through Hole Package / Case: ISOPLUSi5-Pak™ Supplier Device Package: ISOPLUS i4-PAC™ Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 38 pct. REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXTF2 Drive Voltage (Max Rds On, Min Rds On): 10V California Prop 65: Warning Information Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) Rds On (Max) @ Id, Vgs: 21Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1346824-IXTF2N300P3 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IXTF2N300P3-ND - DigiKey
    DigiKey
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Description
Win Source Part Number: 1346824-IXTF2N300P3 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: Polar P3™ Package: Tube Standard Package: 25 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 3000 V Power Dissipation (Max): 160W (Tc) Mounting Type: Through Hole Package / Case: ISOPLUSi5-Pak™ Supplier Device Package: ISOPLUS i4-PAC™ Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 38 pct. REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXTF2 Drive Voltage (Max Rds On, Min Rds On): 10V California Prop 65: Warning Information Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) Rds On (Max) @ Id, Vgs: 21Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1346824-IXTF2N300P3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
1346824-IXTF2N300P3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1346824-IXTF2N300P3
Win Source Part Number: 1346824-IXTF2N300P3 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: Polar P3™ Package: Tube Standard Package: 25 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 3000 V Power Dissipation (Max): 160W (Tc) Mounting Type: Through Hole Package / Case: ISOPLUSi5-Pak™ Supplier Device Package: ISOPLUS i4-PAC™ Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 38 pct. REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXTF2 Drive Voltage (Max Rds On, Min Rds On): 10V California Prop 65: Warning Information Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) Rds On (Max) @ Id, Vgs: 21Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V

Win Source Part Number: 1346824-IXTF2N300P3
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Series: Polar P3™
Package: Tube
Standard Package: 25
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 3000 V
Power Dissipation (Max): 160W (Tc)
Mounting Type: Through Hole
Package / Case: ISOPLUSi5-Pak™
Supplier Device Package: ISOPLUS i4-PAC™
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 38 pct.
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Base Product Number: IXTF2
Drive Voltage (Max Rds On, Min Rds On): 10V
California Prop 65: Warning Information
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 21Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V

Buy Now Datasheet
Single FETs, MOSFETs - IXTF2N300P3-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTF2N300P3-ND
Single FETs, MOSFETs IXTF2N300P3-ND
N-Channel 3000V 1.6A (Tc) 160W (Tc) Through Hole ISOPLUS i4-PAC™

N-Channel 3000V 1.6A (Tc) 160W (Tc) Through Hole ISOPLUS i4-PAC™

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IXTF2N300P3
MOSFET IXTF2N300P3
MOSFET DISC MSFT N-CH STD-POLAR3

MOSFET DISC MSFT N-CH STD-POLAR3

Buy Now Datasheet
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTF2N300P3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTF2N300P3
MOSFET N-CH 3000V 1.6A I4PAC

MOSFET N-CH 3000V 1.6A I4PAC

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Acme Chip Technology Co., Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1346824-IXTF2N300P3 IXTF2N300P3-ND IXTF2N300P3 IXTF2N300P3
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
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