Manufacturer: IXYS
Win Source Part Number: 1191246-IXTA96P085T
Packaging: Tube
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: P-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-263 (IXTA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 298W
Alternative Parts (Cross-Reference): SUM110P08-11L-E3;
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 85V
Id - Continuous Drain Current: 96A
Rds On (Maximum) at Id, Vgs: 13mOhm at 48A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 180nC at 10V
Gate Source Voltage (Maximum): ±15V
Input Capacitance (Ciss) (Maximum) at Vds: 13100pF at 25V
P-Channel 85V 96A (Tc) 298W (Tc) Surface Mount TO-263AA
MOSFET P-CH 85V 96A TO263
MOSFET P-CH 85V 96A TO-263
MOSFET P-CH 85V 96A TO263
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1191246-IXTA96P085T | IXTA96P085T-ND | IXTA96P085T | IXTA96P085T | 401-IXTA96P085T | IXTA96P085T |
| Product Name | FETs - Single - IXTA96P085T | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | MOSFET P-CH 85V 96A TO-263 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | |||
| Operating Mode | Enhancement | |||||
| V(BR)DSS | 85 volts | 85 volts | -85 volts | |||
| QG | 180 nC | |||||
| PD | 298000 milliwatts | 298000 milliwatts | 298000 milliwatts |