Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA80N10T IXTA80N10T

Description
Manufacturer: IXYS Win Source Part Number: 777650-IXTA80N10T Series: TrenchMV Packaging: Tube Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-263 (IXTA) Channel Type Type: N Drain Source Voltage: 100V Vgs(th) (Maximum) @ Id: 5V @ 100μA Gate Charge (Qg) (Maximum) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 3040pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 230W (Tc) Rds On (Maximum) @ Id, Vgs: 14 mOhm @ 25A, 10V Alternative Parts (Cross-Reference): NTB6411ANT4G; NVB6411ANT4G; BUK7615-100A; IXTA80N10T; Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Limited Quantity per package: 50
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA80N10T - 777650-IXTA80N10T - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - 238-IXTA80N10T-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTA80N10T - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: IXYS Win Source Part Number: 777650-IXTA80N10T Series: TrenchMV Packaging: Tube Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-263 (IXTA) Channel Type Type: N Drain Source Voltage: 100V Vgs(th) (Maximum) @ Id: 5V @ 100μA Gate Charge (Qg) (Maximum) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 3040pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 230W (Tc) Rds On (Maximum) @ Id, Vgs: 14 mOhm @ 25A, 10V Alternative Parts (Cross-Reference): NTB6411ANT4G; NVB6411ANT4G; BUK7615-100A; IXTA80N10T; Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Limited Quantity per package: 50
Request a Quote Datasheet

Suppliers

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Product
Description
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA80N10T - 777650-IXTA80N10T - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA80N10T
777650-IXTA80N10T
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA80N10T 777650-IXTA80N10T
Manufacturer: IXYS Win Source Part Number: 777650-IXTA80N10T Series: TrenchMV Packaging: Tube Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-263 (IXTA) Channel Type Type: N Drain Source Voltage: 100V Vgs(th) (Maximum) @ Id: 5V @ 100μA Gate Charge (Qg) (Maximum) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 3040pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 230W (Tc) Rds On (Maximum) @ Id, Vgs: 14 mOhm @ 25A, 10V Alternative Parts (Cross-Reference): NTB6411ANT4G; NVB6411ANT4G; BUK7615-100A; IXTA80N10T; Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Limited Quantity per package: 50

Manufacturer: IXYS
Win Source Part Number: 777650-IXTA80N10T
Series: TrenchMV
Packaging: Tube
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: TO-263 (IXTA)
Channel Type Type: N
Drain Source Voltage: 100V
Vgs(th) (Maximum) @ Id: 5V @ 100μA
Gate Charge (Qg) (Maximum) @ Vgs: 60nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 3040pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 230W (Tc)
Rds On (Maximum) @ Id, Vgs: 14 mOhm @ 25A, 10V
Alternative Parts (Cross-Reference): NTB6411ANT4G; NVB6411ANT4G; BUK7615-100A; IXTA80N10T;
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Limited
Quantity per package: 50

Buy Now Datasheet
Single FETs, MOSFETs - 238-IXTA80N10T-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXTA80N10T-ND
Single FETs, MOSFETs 238-IXTA80N10T-ND
N-Channel 100V 80A (Tc) 230W (Tc) Surface Mount TO-263AA

N-Channel 100V 80A (Tc) 230W (Tc) Surface Mount TO-263AA

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IXTA80N10T
MOSFET IXTA80N10T
MOSFET 80 Amps 100V 13.0 Rds

MOSFET 80 Amps 100V 13.0 Rds

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTA80N10T - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTA80N10T
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTA80N10T
MOSFET N-CH 100V 80A TO263

MOSFET N-CH 100V 80A TO263

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 777650-IXTA80N10T 238-IXTA80N10T-ND IXTA80N10T IXTA80N10T
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA80N10T Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PD 230000 milliwatts
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