Zilog Single FETs, MOSFETs IXTA80N10T

Description
N-Channel 100V 80A (Tc) 230W (Tc) Surface Mount TO-263AA
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Description
N-Channel 100V 80A (Tc) 230W (Tc) Surface Mount TO-263AA
Request a Quote Datasheet

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Single FETs, MOSFETs - 238-IXTA80N10T-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXTA80N10T-ND
Single FETs, MOSFETs 238-IXTA80N10T-ND
N-Channel 100V 80A (Tc) 230W (Tc) Surface Mount TO-263AA

N-Channel 100V 80A (Tc) 230W (Tc) Surface Mount TO-263AA

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA80N10T - 777650-IXTA80N10T - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA80N10T
777650-IXTA80N10T
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA80N10T 777650-IXTA80N10T
Manufacturer: IXYS Win Source Part Number: 777650-IXTA80N10T Series: TrenchMV Packaging: Tube Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-263 (IXTA) Channel Type Type: N Drain Source Voltage: 100V Vgs(th) (Maximum) @ Id: 5V @ 100μA Gate Charge (Qg) (Maximum) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 3040pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 230W (Tc) Rds On (Maximum) @ Id, Vgs: 14 mOhm @ 25A, 10V Alternative Parts (Cross-Reference): NTB6411ANT4G; NVB6411ANT4G; BUK7615-100A; IXTA80N10T; Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Limited Quantity per package: 50

Manufacturer: IXYS
Win Source Part Number: 777650-IXTA80N10T
Series: TrenchMV
Packaging: Tube
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: TO-263 (IXTA)
Channel Type Type: N
Drain Source Voltage: 100V
Vgs(th) (Maximum) @ Id: 5V @ 100μA
Gate Charge (Qg) (Maximum) @ Vgs: 60nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 3040pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 230W (Tc)
Rds On (Maximum) @ Id, Vgs: 14 mOhm @ 25A, 10V
Alternative Parts (Cross-Reference): NTB6411ANT4G; NVB6411ANT4G; BUK7615-100A; IXTA80N10T;
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Limited
Quantity per package: 50

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Sheung Wan, Hong Kong
MOSFET 80 Amps 100V 13.0 Rds

MOSFET 80 Amps 100V 13.0 Rds

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTA80N10T - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTA80N10T
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTA80N10T
MOSFET N-CH 100V 80A TO263

MOSFET N-CH 100V 80A TO263

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Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 238-IXTA80N10T-ND 777650-IXTA80N10T IXTA80N10T IXTA80N10T
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA80N10T MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
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