Zilog FETs - Single - IXTA3N120 IXTA3N120

Description
Manufacturer: IXYS Win Source Part Number: 1191240-IXTA3N120 Packaging: Tube Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-263 (IXTA) Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 200W Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Sufficient Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 1200V Id - Continuous Drain Current: 3A Rds On (Maximum) at Id, Vgs: 4.5Ohm at 1.5A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 42nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 1350pF at 25V
  • FETs - Single - IXTA3N120 - 1191240-IXTA3N120 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IXTA3N120 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - IXTA3N120-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTA3N120 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Trans MOSFET N-CH 1.1KV 3A 3-Pin(2+Tab) TO-263 - 401-IXTA3N120 - Utmel Electronic Limited
    Utmel Electronic Limited
  • Transistor - 56959131 - Radwell International
    Radwell International
Request a Quote Datasheet
Description
Manufacturer: IXYS Win Source Part Number: 1191240-IXTA3N120 Packaging: Tube Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-263 (IXTA) Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 200W Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Sufficient Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 1200V Id - Continuous Drain Current: 3A Rds On (Maximum) at Id, Vgs: 4.5Ohm at 1.5A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 42nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 1350pF at 25V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FETs - Single - IXTA3N120 - 1191240-IXTA3N120 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IXTA3N120
1191240-IXTA3N120
FETs - Single - IXTA3N120 1191240-IXTA3N120
Manufacturer: IXYS Win Source Part Number: 1191240-IXTA3N120 Packaging: Tube Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-263 (IXTA) Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 200W Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Sufficient Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 1200V Id - Continuous Drain Current: 3A Rds On (Maximum) at Id, Vgs: 4.5Ohm at 1.5A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 42nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 1350pF at 25V

Manufacturer: IXYS
Win Source Part Number: 1191240-IXTA3N120
Packaging: Tube
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-263 (IXTA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 200W
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 1200V
Id - Continuous Drain Current: 3A
Rds On (Maximum) at Id, Vgs: 4.5Ohm at 1.5A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 42nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 1350pF at 25V

Buy Now Datasheet
Single FETs, MOSFETs - IXTA3N120 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXTA3N120
Single FETs, MOSFETs IXTA3N120
MOSFET N-CH 1200V 3A TO263

MOSFET N-CH 1200V 3A TO263

Supplier's Site Datasheet
Single FETs, MOSFETs - IXTA3N120-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTA3N120-ND
Single FETs, MOSFETs IXTA3N120-ND
N-Channel 1200V 3A (Tc) 200W (Tc) Surface Mount TO-263AA

N-Channel 1200V 3A (Tc) 200W (Tc) Surface Mount TO-263AA

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTA3N120 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTA3N120
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTA3N120
MOSFET N-CH 1200V 3A TO263

MOSFET N-CH 1200V 3A TO263

Supplier's Site
Trans MOSFET N-CH 1.1KV 3A 3-Pin(2+Tab) TO-263 - 401-IXTA3N120 - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
Trans MOSFET N-CH 1.1KV 3A 3-Pin(2+Tab) TO-263
401-IXTA3N120
Trans MOSFET N-CH 1.1KV 3A 3-Pin(2+Tab) TO-263 401-IXTA3N120
Trans MOSFET N-CH 1.1KV 3A 3-Pin(2+Tab) TO-263

Trans MOSFET N-CH 1.1KV 3A 3-Pin(2+Tab) TO-263

Supplier's Site
Transistor - 56959131 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
56959131
Transistor 56959131
MOSFET, 3 AMP, 1200V, SMD/SMT, TO-263-3, N-CHANNEL, 4.5 RDS, CONFIGURATION: SINGLE. FREE 2 YEAR RADWELL WARRANTY

MOSFET, 3 AMP, 1200V, SMD/SMT, TO-263-3, N-CHANNEL, 4.5 RDS, CONFIGURATION: SINGLE. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IXTA3N120
MOSFET IXTA3N120
MOSFET 3 Amps 1200V 4.5 Rds

MOSFET 3 Amps 1200V 4.5 Rds

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited Radwell International VAST STOCK CO., LIMITED
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1191240-IXTA3N120 IXTA3N120 IXTA3N120-ND IXTA3N120 401-IXTA3N120 56959131 IXTA3N120
Product Name FETs - Single - IXTA3N120 Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Trans MOSFET N-CH 1.1KV 3A 3-Pin(2+Tab) TO-263 Transistor MOSFET
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 1200 volts 1200 volts 1100 volts
QG 42 nC
PD 200000 milliwatts 200000 milliwatts 150000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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