Zilog Single FETs, MOSFETs IXTA3N120

Description
MOSFET N-CH 1200V 3A TO263
  • Single FETs, MOSFETs - IXTA3N120 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • FETs - Single - IXTA3N120 - 1191240-IXTA3N120 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IXTA3N120-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTA3N120 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Transistor - 56959131 - Radwell International
    Radwell International
  • Trans MOSFET N-CH 1.1KV 3A 3-Pin(2+Tab) TO-263 - 401-IXTA3N120 - Utmel Electronic Limited
    Utmel Electronic Limited
Request a Quote Datasheet
Description
MOSFET N-CH 1200V 3A TO263
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IXTA3N120 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXTA3N120
Single FETs, MOSFETs IXTA3N120
MOSFET N-CH 1200V 3A TO263

MOSFET N-CH 1200V 3A TO263

Supplier's Site Datasheet
FETs - Single - IXTA3N120 - 1191240-IXTA3N120 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IXTA3N120
1191240-IXTA3N120
FETs - Single - IXTA3N120 1191240-IXTA3N120
Manufacturer: IXYS Win Source Part Number: 1191240-IXTA3N120 Packaging: Tube Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-263 (IXTA) Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 200W Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Sufficient Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 1200V Id - Continuous Drain Current: 3A Rds On (Maximum) at Id, Vgs: 4.5Ohm at 1.5A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 42nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 1350pF at 25V

Manufacturer: IXYS
Win Source Part Number: 1191240-IXTA3N120
Packaging: Tube
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-263 (IXTA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 200W
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 1200V
Id - Continuous Drain Current: 3A
Rds On (Maximum) at Id, Vgs: 4.5Ohm at 1.5A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 42nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 1350pF at 25V

Buy Now Datasheet
Single FETs, MOSFETs - IXTA3N120-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTA3N120-ND
Single FETs, MOSFETs IXTA3N120-ND
N-Channel 1200V 3A (Tc) 200W (Tc) Surface Mount TO-263AA

N-Channel 1200V 3A (Tc) 200W (Tc) Surface Mount TO-263AA

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTA3N120 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTA3N120
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTA3N120
MOSFET N-CH 1200V 3A TO263

MOSFET N-CH 1200V 3A TO263

Supplier's Site
Transistor - 56959131 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
56959131
Transistor 56959131
MOSFET, 3 AMP, 1200V, SMD/SMT, TO-263-3, N-CHANNEL, 4.5 RDS, CONFIGURATION: SINGLE. FREE 2 YEAR RADWELL WARRANTY

MOSFET, 3 AMP, 1200V, SMD/SMT, TO-263-3, N-CHANNEL, 4.5 RDS, CONFIGURATION: SINGLE. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IXTA3N120
MOSFET IXTA3N120
MOSFET 3 Amps 1200V 4.5 Rds

MOSFET 3 Amps 1200V 4.5 Rds

Buy Now Datasheet
Trans MOSFET N-CH 1.1KV 3A 3-Pin(2+Tab) TO-263 - 401-IXTA3N120 - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
Trans MOSFET N-CH 1.1KV 3A 3-Pin(2+Tab) TO-263
401-IXTA3N120
Trans MOSFET N-CH 1.1KV 3A 3-Pin(2+Tab) TO-263 401-IXTA3N120
Trans MOSFET N-CH 1.1KV 3A 3-Pin(2+Tab) TO-263

Trans MOSFET N-CH 1.1KV 3A 3-Pin(2+Tab) TO-263

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Radwell International VAST STOCK CO., LIMITED Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET Transistors RF Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTA3N120 1191240-IXTA3N120 IXTA3N120-ND IXTA3N120 56959131 IXTA3N120 401-IXTA3N120
Product Name Single FETs, MOSFETs FETs - Single - IXTA3N120 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Transistor MOSFET Trans MOSFET N-CH 1.1KV 3A 3-Pin(2+Tab) TO-263
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 1200 volts 1200 volts 1100 volts
IDSS 3000 milliamps
PD 200000 milliwatts 200000 milliwatts 150000 milliwatts
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