Zilog Single FETs, MOSFETs IXTA1N100P

Description
N-Channel 1000V 1A (Tc) 50W (Tc) Surface Mount TO-263AA
Request a Quote Datasheet
Description
N-Channel 1000V 1A (Tc) 50W (Tc) Surface Mount TO-263AA
Request a Quote Datasheet

Suppliers

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Product
Description
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Single FETs, MOSFETs - IXTA1N100P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTA1N100P-ND
Single FETs, MOSFETs IXTA1N100P-ND
N-Channel 1000V 1A (Tc) 50W (Tc) Surface Mount TO-263AA

N-Channel 1000V 1A (Tc) 50W (Tc) Surface Mount TO-263AA

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA1N100P - 1049724-IXTA1N100P - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA1N100P
1049724-IXTA1N100P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA1N100P 1049724-IXTA1N100P
Manufacturer: IXYS Win Source Part Number: 1049724-IXTA1N100P Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-263 (IXTA) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 1000V Continuous Drain Current at 25°C: 1A (Tc) Gate-Source Threshold Voltage: 4.5V @ 50μA Max Gate Charge: 15.5nC @ 10V Max Input Capacitance: 331pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 15 Ohm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Sufficient Quantity per package: 50

Manufacturer: IXYS
Win Source Part Number: 1049724-IXTA1N100P
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 50W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-263 (IXTA)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 1000V
Continuous Drain Current at 25°C: 1A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 50μA
Max Gate Charge: 15.5nC @ 10V
Max Input Capacitance: 331pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 15 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Sufficient
Quantity per package: 50

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTA1N100P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTA1N100P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTA1N100P
MOSFET N-CH 1000V 1A TO263

MOSFET N-CH 1000V 1A TO263

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 1 Amps 1000V 14 Rds

MOSFET 1 Amps 1000V 14 Rds

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTA1N100P-ND 1049724-IXTA1N100P IXTA1N100P IXTA1N100P
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA1N100P Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3; TO-263 (IXTA) TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
V(BR)DSS 1000 volts
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