IXYS Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA180N055T IXTA180N055T

Description
Manufacturer: IXYS Win Source Part Number: 1010260-IXTA180N055T Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: TO-263 (IXTA) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 180A (Tc) Gate-Source Threshold Voltage: 4V @ 1mA Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA180N055T - 1010260-IXTA180N055T - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTA180N055T - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Manufacturer: IXYS Win Source Part Number: 1010260-IXTA180N055T Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: TO-263 (IXTA) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 180A (Tc) Gate-Source Threshold Voltage: 4V @ 1mA Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA180N055T - 1010260-IXTA180N055T - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA180N055T
1010260-IXTA180N055T
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA180N055T 1010260-IXTA180N055T
Manufacturer: IXYS Win Source Part Number: 1010260-IXTA180N055T Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: TO-263 (IXTA) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 180A (Tc) Gate-Source Threshold Voltage: 4V @ 1mA Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance

Manufacturer: IXYS
Win Source Part Number: 1010260-IXTA180N055T
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: TO-263 (IXTA)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 180A (Tc)
Gate-Source Threshold Voltage: 4V @ 1mA
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTA180N055T - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTA180N055T
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTA180N055T
MOSFET N-CH 55V 180A TO263

MOSFET N-CH 55V 180A TO263

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Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1010260-IXTA180N055T IXTA180N055T
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA180N055T Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
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